Datasheet SI4447ADY-T1-GE3 - Vishay MOSFET, P CH, W/D, 40 V, 7.2 A, SO8 — Datenblatt

Vishay SI4447ADY-T1-GE3

Part Number: SI4447ADY-T1-GE3

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, P CH, W/D, 40 V, 7.2 A, SO8

data sheetDownload Data Sheet

Docket:
New Product
Si4447ADY
Vishay Siliconix
P-Channel 40 V (D-S) MOSFET
FEATURES

Specifications:

  • Continuous Drain Current Id: -7.2 A
  • Drain Source Voltage Vds: -40 V
  • Number of Pins: 8
  • On Resistance Rds(on): 0.036 Ohm
  • Operating Temperature Range: -55°C to +150°C
  • Power Dissipation: 4.2 W
  • Rds(on) Test Voltage Vgs: -10 V
  • Transistor Case Style: SOIC
  • Transistor Polarity: P Channel

RoHS: Yes

Andere Namen:

SI4447ADYT1GE3, SI4447ADY T1 GE3