Datasheet IRFH8337TR2PBF - International Rectifier MOSFET, N CH, W DIODE, 30 V, 12 A, PQFN56 — Datenblatt

International Rectifier IRFH8337TR2PBF

Part Number: IRFH8337TR2PBF

Detaillierte Beschreibung

Manufacturer: International Rectifier

Description: MOSFET, N CH, W DIODE, 30 V, 12 A, PQFN56

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Docket:
PD - 97646A
IRFH8337PbF
HEXFET® Power MOSFET
VDS VGS
max

Specifications:

  • Continuous Drain Current Id: 16.2 A
  • Drain Source Voltage Vds: 30 V
  • Number of Pins: 8
  • On Resistance Rds(on): 0.0103 Ohm
  • Operating Temperature Range: -55°C to +150°C
  • Power Dissipation: 27 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Threshold Voltage Vgs Typ: 1.8 V
  • Transistor Case Style: QFN
  • Transistor Polarity: N Channel

RoHS: Yes