Datasheet BF862 (NXP) - 3

link to page 3 link to page 3 NXP Semiconductors Product specification N-channel junction FET BF862
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage  20 V VDG drain-gate voltage  20 V VGS gate-source voltage  20 V IDS drain-source current  40 mA IG forward gate current  10 mA P  tot total power dissipation Ts 90 C; note 1  300 mW Tstg storage temperature 65 +150 C Tj junction temperature  150 C
Note
1. Main heat transfer is via the gate lead.
THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-s thermal resistance from junction to soldering note 1 200 K/W point
Note
1. Soldering point of the gate lead. MCD808 400 handbook, halfpage Ptot (mW) 300 200 100 0 0 40 80 120 160 Ts (°C) Fig.2 Power derating curve. 2000 Jan 05 3 Document Outline Features Applications Description Pinning SOT23 Quick reference data Limiting values Thermal characteristics Static characteristics Dynamic characteristics Package outline Data sheet status Definitions Disclaimers