Datasheet FMMT3903, FMMT3904 (Diodes)

HerstellerDiodes
BeschreibungSOT23 NPN SILICON PLANAR SWITCHING TRANSISTORS
Seiten / Seite2 / 1 — SOT23 NPN SILICON PLANAR. FMMT3903. SWITCHING TRANSISTORS. FMMT3904. …
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DokumentenspracheEnglisch

SOT23 NPN SILICON PLANAR. FMMT3903. SWITCHING TRANSISTORS. FMMT3904. ISSUE 2 – SEPTEMBER 94. ABSOLUTE MAXIMUM RATINGS

Datasheet FMMT3903, FMMT3904 Diodes

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SOT23 NPN SILICON PLANAR FMMT3903 SWITCHING TRANSISTORS FMMT3904 ISSUE 2 – SEPTEMBER 94
✪ COMPLIMENTARY TYPES – FMMT3903 - FMMT3905 FMMT3904 - FMMT3906
E C
PARTMARKING DETAIL – FMMT3903 - 1W
B
FMMT3904 - 1A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 60 V CollectorEmitter Voltage VCEO 40 V EmitterBase Voltage VEBO 6 V Continuous Collector Current IC 200 mA Power Dissipation at Tamb=25°C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
FMMT3903 FMMT3904 PARAMETER SYMBOL UNIT CONDITIONS. MIN. MAX. MIN. MAX. Collector Base V(BR)CBO 60 60 V IC=10µA, IE=0 Breakdown Voltage CollectorEmitter V(BR)CEO 40 40 V IC=1mA, IB=0* Breakdown Voltage EmitterBase V(BR)EBO 6 6 V IE=10µA, IC=0 Breakdown Voltage CollectorEmitter ICEX 50 50 nA VCE=30V, VBE(off) =3V CutOff Current Base CutOff IBEX 50 50 nA VCE=30V, VEB(off) =3V Current Static Forward hFE 20 40 IC=0.1mA, VCE=1V* Current Transfer 35 70 IC=1mA, VCE=1V* Ratio 50 150 100 300 IC=10mA, VCE=1V* 30 60 IC=50mA, VCE=1V* 15 30 IC=100mA, VCE=1V* CollectorEmitter VCE(sat) 0.2 0.2 V IC=10mA, IB=1mA* Saturation Voltage 0.3 0.3 V IC=50mA, IB=5mA* BaseEmitter VBE(sat) 0.65 0.85 0.65 0.85 V IC=10mA, IB=1mA* Saturation Voltage 0.95 0.95 V IC=50mA, IB=5mA* Transition fT 250 300 MHz IC=10mA, VCE=20V Frequency f=100MHz Output Cobo 4 4 pF VCB=5V, IE=0, f=100KHz Capacitance Input Capacitance Cibo 8 8 pF VBE=0.5V, IC=0, f=100KHz
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