Datasheet BSC093N04LS G - 5
| Beschreibung | OptiMOS 3 Power-Transistor |
| Seiten / Seite | 10 / 5 — BSC093N04LS G. 5 Typ. output characteristics. 6 Typ. drain-source on … |
| Dateiformat / Größe | PDF / 533 Kb |
| Dokumentensprache | Englisch |
BSC093N04LS G. 5 Typ. output characteristics. 6 Typ. drain-source on resistance. 120. 100. [V]. [A]. 7 Typ. transfer characteristics
Textversion des Dokuments
BSC093N04LS G 5 Typ. output characteristics 6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS
120 20
3.5 V 5 V 4.5 V
100
10 V
16
4 V
80 ] 12
W 4.5 V 4 V
] [m )
5 V
[A 60 n o( I D DS
10 V
R 8 40
3.5 V
4 20
3.2 V 3 V 2.8 V
0 0 0 1 2 3 0 10 20 30 40 50 V [V] I [A] DS D 7 Typ. transfer characteristics 8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j
120 120 100 100 80 80 ] [A 60 [S] 60 I D fsg 40 40 20 20
150 °C 25 °C
0 0 0 1 2 3 4 5 0 40 80 120 160 V [V] I [A] GS D
Rev. 2.1 page 5 2013-05-21
I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS
120 20
3.5 V 5 V 4.5 V
100
10 V
16
4 V
80 ] 12
W 4.5 V 4 V
] [m )
5 V
[A 60 n o( I D DS
10 V
R 8 40
3.5 V
4 20
3.2 V 3 V 2.8 V
0 0 0 1 2 3 0 10 20 30 40 50 V [V] I [A] DS D 7 Typ. transfer characteristics 8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j
120 120 100 100 80 80 ] [A 60 [S] 60 I D fsg 40 40 20 20
150 °C 25 °C
0 0 0 1 2 3 4 5 0 40 80 120 160 V [V] I [A] GS D
Rev. 2.1 page 5 2013-05-21