Preliminary Datasheet EPC2102 (Efficient Power Conversion) - 8

HerstellerEfficient Power Conversion
BeschreibungEnhancement-Mode GaN Power Transistor Half Bridge
Seiten / Seite10 / 8 — EPC2102 – Enhancement-Mode GaN Power Transistor Half Bridge. Preliminary …
Dateiformat / GrößePDF / 1.4 Mb
DokumentenspracheEnglisch

EPC2102 – Enhancement-Mode GaN Power Transistor Half Bridge. Preliminary Specification Sheet. DIE MARKINGS. DIE OUTLINE

EPC2102 – Enhancement-Mode GaN Power Transistor Half Bridge Preliminary Specification Sheet DIE MARKINGS DIE OUTLINE

Modelllinie für dieses Datenblatt

EPC2102

Textversion des Dokuments

EPC2102 – Enhancement-Mode GaN Power Transistor Half Bridge Preliminary Specification Sheet DIE MARKINGS
Laser Marking Part Number Part # Marking Lot_Date Code Lot_Date Code Line 1 Marking Line 2 Marking Line 3 EPC2102ENGR 21XX YYYY ZZZZ
DIE OUTLINE Solder Bar View Pad 2 is Gate1 ( high side); Pad 4 is Gate2 ( low side); Pad 3 is HS Gate Return; Pads 5, 14, 15, 24, 25, 34, 35, 43, 44, 35, 53, 54, 44, 63, 64, 65, 73, 74, 75 are Ground Pads 1, 11, 12, 13, 21, 22, 23, 31, 32, 33, 41, 42, 51, 52, 61, 62, 71, 72 are VIN Pads 3, 6, 7, 8, 9, 10, 16, 17, 18, 19, 20, 26, 27, 28, 29, 30, 36, 37, 38, 39, 40, 46, 47, 48, 49, 50, 56, 57, 58, 59, 60, 66, 67, 68, 69, 70 are switch node. Side View
Subject to Change without Notice www.epc-co.com COPYRIGHT 2015 Page 8