Datasheet JX4S0020120M (JX Semiconductor) - 3
| Hersteller | JX Semiconductor |
| Beschreibung | 1200V N-Channel SiC MOSFET in TO-247 package |
| Seiten / Seite | 7 / 3 — JX4S0020120M. Typical Performance-Dynamic. Symbol. Parameter. Test … |
| Dateiformat / Größe | PDF / 636 Kb |
| Dokumentensprache | Englisch |
JX4S0020120M. Typical Performance-Dynamic. Symbol. Parameter. Test Conditions. Min. Typ. Max. Unit
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JX4S0020120M Typical Performance-Dynamic Symbol Parameter Test Conditions Min. Typ. Max. Unit
Ciss Input Capacitance 6378 pF VDS=1000V,f=1MHZ , Coss Output Capacitance 245 pF VAC=25mV Crss Reverse Transfer Capacitance 15 pF gfs Transconductance VDS=20V , ID=50A 51 S EOSS COSS Stored Energy VDS=1000V,f=1MHZ 141 μJ EON Turn-On Energy（Body Diode） VDS=800V,VGS=-5/20V， 2.60 mJ ID=50A ，L=68uH EOFF Turn-Off Energy（Body Diode） TJ=150℃ 0.73 mJ Qg Total Gate Charge 238 nC VDS=800V, VGS=-5V/20V, Qgs Gate-source Charge 76.7 nC ID = 50 A Qgd Gate-Drain Charge 78.3 nC RG（int） Internal Gate Resistance f=1MHz,VAC=25mV 3.5 Ω td(on) Turn-on Delay Time V 42 ns DS=800V,VGS=-5V/20V, tr Rise Time ID =50A, L=68 μH 34 ns td(off) Turn-off Delay Time Rext=2.5Ω 71 ns tf Fal Time 13 ns
Typical Performance-Reverse Diode(TJ = 25 unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS=0V,IF=37.5A,TJ=25 C 4.6 6 V VFSD Forward Voltage VGS=0V,IF=37.5A,TJ=150 C 4.2 6 V Is Continuous Diode Forward Current VGS=0V ，TC=25 C 110 A trr Reverse Recovery Time VGS=-5 V, IF=50 A, 98 nS Qrr Reverse Recovery Charge VR=800 V, di/dt=900 613 nC Irrm Peak Reverse Recovery Current A/μs ，TJ=150 C 18 A
Thermal Characteristics
Symbol Parameter Value. Unit R JC Thermal Resistance, Junction-to-Case 0.23 C/W R JA Thermal Resistance, Junction-to-Ambient 40 C/W The values are based on the junction-to case thermal impedance which is measured with the device mounted to a large heat sink assuming maximum junction temperature of Tj(max)=150℃ 3 Document Outline Fig2. Output characteristics (TJ = 150 °C) Fig3.Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig6. Body Diode Characteristic at 25 ºC Fig7.Threshold Voltage vs. Temperature Fig9. 3rd Quadrant Characteristic at 25 ºC Fig8. Gate Charge Characteristics Fig10. Output Capacitor Stored Energy Fig11. Capacitances vs. Drain-Source Fig12. Max Power Dissipation Derating Vs TC Fig13. Switching Energy vs. Drain Current Fig15. Switching Energy vs. Temperature Fig17.Transient Thermal Impedance Fig14. Switching Energy vs. RG(ext) Fig16. Switching Times vs. RG(ext) Fig18. Safe Operating Area
Ciss Input Capacitance 6378 pF VDS=1000V,f=1MHZ , Coss Output Capacitance 245 pF VAC=25mV Crss Reverse Transfer Capacitance 15 pF gfs Transconductance VDS=20V , ID=50A 51 S EOSS COSS Stored Energy VDS=1000V,f=1MHZ 141 μJ EON Turn-On Energy（Body Diode） VDS=800V,VGS=-5/20V， 2.60 mJ ID=50A ，L=68uH EOFF Turn-Off Energy（Body Diode） TJ=150℃ 0.73 mJ Qg Total Gate Charge 238 nC VDS=800V, VGS=-5V/20V, Qgs Gate-source Charge 76.7 nC ID = 50 A Qgd Gate-Drain Charge 78.3 nC RG（int） Internal Gate Resistance f=1MHz,VAC=25mV 3.5 Ω td(on) Turn-on Delay Time V 42 ns DS=800V,VGS=-5V/20V, tr Rise Time ID =50A, L=68 μH 34 ns td(off) Turn-off Delay Time Rext=2.5Ω 71 ns tf Fal Time 13 ns
Typical Performance-Reverse Diode(TJ = 25 unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS=0V,IF=37.5A,TJ=25 C 4.6 6 V VFSD Forward Voltage VGS=0V,IF=37.5A,TJ=150 C 4.2 6 V Is Continuous Diode Forward Current VGS=0V ，TC=25 C 110 A trr Reverse Recovery Time VGS=-5 V, IF=50 A, 98 nS Qrr Reverse Recovery Charge VR=800 V, di/dt=900 613 nC Irrm Peak Reverse Recovery Current A/μs ，TJ=150 C 18 A
Thermal Characteristics
Symbol Parameter Value. Unit R JC Thermal Resistance, Junction-to-Case 0.23 C/W R JA Thermal Resistance, Junction-to-Ambient 40 C/W The values are based on the junction-to case thermal impedance which is measured with the device mounted to a large heat sink assuming maximum junction temperature of Tj(max)=150℃ 3 Document Outline Fig2. Output characteristics (TJ = 150 °C) Fig3.Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig6. Body Diode Characteristic at 25 ºC Fig7.Threshold Voltage vs. Temperature Fig9. 3rd Quadrant Characteristic at 25 ºC Fig8. Gate Charge Characteristics Fig10. Output Capacitor Stored Energy Fig11. Capacitances vs. Drain-Source Fig12. Max Power Dissipation Derating Vs TC Fig13. Switching Energy vs. Drain Current Fig15. Switching Energy vs. Temperature Fig17.Transient Thermal Impedance Fig14. Switching Energy vs. RG(ext) Fig16. Switching Times vs. RG(ext) Fig18. Safe Operating Area