Datasheet JX3S0020120M (JX Semiconductor)

JX3S0020120M
1200V, 100A, 16mΩ, N-Channel, Silicon Carbide MOSFET Product Data Sheet JX-3T04-27A A/2
General Description
TheJX-MT3 series SiC MOSFET in TO-247-3L package ensures stable high-temperature operation for power-dense and energy-critical systems, enabling compact designs with reduced EMI.
Features
3rd Generation SiC MOSFET Technology High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to paral el and Simple to Drive RoHS Compliant, Halogen Free
Applications Ordering Informations
EV Charging
Order Number / Marking
ASC100N1200MT3 High Voltage DC/DC Converters
Package Type
TO-247-3L Switch Mode Power Supplies
Packing Method
Tube Power Factor Correction Modules
Key Parameters Symbol Parameter Values Unit Test Conditions Absolute maximum rating
VDS Drain-source Voltage 1200 V TC=25°C ID Drain Current (continuous) 115 A TC=25°C PD Power Dissipation 550 W TC=25°C TJ Junction Temperature -55 to +175 °C
Symbol Parameter Min. Typ. Max. Unit Test Conditions Static characteristics
RDS(on) Static Drain-source on Resistance - 16 22 mΩ VGS=18V; ID=50A; TJ=25°C
Dynamic characteristics
QG Total Gate Charge - 238 - nC VDS=800V; VGS=-5V/18V; ID=50A QGD Gate-drain Charge - 78.3 -
Source-drain diode
Qrr Reverse Recovery Charge - 613 - nC VGS=-5V; IF=50A; VR=800V; di/dt=900A/μs; TJ=175°C
Product Data Sheet
1
JX-3T04-27AA/2
Document Outline JX3S0020120M General Description Thermal Characteristics Typical Performance Figure 1 Output Characteristics (TJ=25 °C) Figure 3 Figure 2 Output Characteristics (TJ=175°C) Figure 4 Typical Performance Figure 5 Figure 7 Figure 6 Body Diode Characteristic at 25°C Figure 8 Gate Charge Characteristics Typical Performance Figure 9 Figure 10 Figure 11 Figure 12 Typical Performance Figure 13 Figure 14 Switching Energy vs. RG(ext) RG(ext)=2.5Ω Figure 15 Figure 16 Switching Times vs. RG(ext) Typical Performance Figure 17 Figure 18 Contact Info