Datasheet JX4S0040R120M (JX Semiconductor) - 3

JX4S0040R120M 1200V, N.Channel, Silicon Carbide MOSFET Body Diode Characteristics (at TJ=25°C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions
VGS=0V; IF=20A V Diode Forward Voltage - 4.0 6 SD V - 3.5 6 VGS=0V; IF=20A; TJ=175oC IS Continuous Diode Forward Current - 55 - A VGS=0V; TC=25oC Trr Reverse Recovery Time - 38 - ns VGS=-5V; IF=20A; VR=800V; Qrr Reverse Recovery Charge - 32 - nC di/dt=900A/μs; TJ= 175oC Irrm Peak Reverse Recovery Current - 3 - A
Thermal Characteristics Symbol Parameter Value. Unit
R Thermal Resistance, Junction-to-Case 0.38 oC/W θJC R Thermal Resistance, Junction-to-Ambient 40 oC/W θJA The values are based on Junction-to-Case Thermal Impedance measured with the device mounted to a large heat sink, assuming a maximum junction temperature of TJ(max)=175oC.
Product Data Sheet
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JX.3T04.19A.A2
Document Outline JX4S0040R120M General Description Ordering Informations JX4S0040R120M MOSFET Characteristics Thermal Characteristics Typical Performance Figure 1 Figure 3 Figure 2 Figure 4 Typical Performance Figure 5 Figure 7 Figure 6 Figure 8 Typical Performance Figure 9 Figure 11 Figure 10 Figure 12 Typical Performance Figure 13 Figure 15 Figure 14 Figure 16 Typical Performance Figure 17 Figure 18 Notes & Disclaimer Contact Info