Datasheet SBRFP2M60SAFQ (Diodes) - 3
| Hersteller | Diodes |
| Beschreibung | 2A Field Plated SBR Field Plated Super Barrier Rectifier in SMAF package |
| Seiten / Seite | 5 / 3 — SBRFP2M60SAFQ. www.diodes.com |
| Dateiformat / Größe | PDF / 293 Kb |
| Dokumentensprache | Englisch |
SBRFP2M60SAFQ. www.diodes.com

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SBRFP2M60SAFQ
) 10 100 A T = 175oC ( J T N 1 E R R ) U 10 A C m ( 0.1 D T R N T = 150oC J A E R = 100oC W T = 175oC 0.01 T = 85oC T T = 125oC J J J J R U 1 FOR C T = 125oC J T = 150oC S J 0.001 GE T = 25oC A J OU T = 100oC J E K N A E T = 85oC 0.0001 TA 0.1 J L , N I R A T = 25oC J T S 0.00001 N T = -55oC I J , I F T = -55oC J 0.01 0.000001 0.0 0.2 0.4 0.6 0.8 0 20 40 60 VF, INSTANTANEOUS FORWARD VOLTAGE (V) V , REVERSE VOLTAGE (V) R Figure 1. Typical Forward Characteristics Figure 2. Typical Reverse Characteristics ) 10000 W 2.5 ( ON f = 1MHz TI F) A p P 2 ( I S E S I D NC 1000 A R E 1.5 TJ = 175°C CIT A OW P D CAP R A 1 ON 100 W CTI FOR UN J 0.5 GE A R E V A 10 , ) 0 v a 0 20 40 60 0 1 2 3 4 5 F( REVERSE VOLTAGE (V) P I , AVERAGE FORWARD CURRENT (A) F(av) Figure 3. Typical Junction Capacitance Figure 4. Forward Power Dissipation 2.50 100 5.0 Energy 4.5 ) Note 5 J ) A m ( A 2.00 ( 4.0 T T N GY N E R 3.5 R E R E R R N U E C U 1.50 3.0 C E E H D H C R 10 2.5 C N N A A A W L Current 1.00 A 2.0 L A V V FOR A A . 1.5 . C X X A D A , M 1.0 M 0.50 I F , m mI E 0.5 0.00 1 0.0 25 50 75 100 125 150 175 100.0 1000.0 t , PULSE DURATION (μs) T , CASE TEMPERATURE (oC) C P Figure 5. DC Forward Current Derating Figure 6. Single Pulse Max. Avalanche Energy and Current SBRFP2M60SAFQ 3 of 5 September 2025 Document number: DS46513 Rev. 4 - 2
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