Datasheet JX0320R065MT3 (JX Semiconductor) - 2

JX0320R065MT3 Absolute Maximum Ratings(Tc=25℃) Symbol Parameter Value Unit
VDS Drain-Source Voltage 650 V ID Drain Current(continuous)at Tc=25℃ 8 A ID Drain Current(continuous)at Tc=100℃ 6 A IDM Drain Current (pulsed) 12 A VGS Gate-Source Voltage -8/+18 V PD Power Dissipation TC = 25°C 65 W TJ, Tstg Junction and Storage Temperature Range -55 to +150 ℃
Electrical Characteristics(TJ = 25℃ unless otherwise specified) Typical Performance-Static Symbol Parameter Test Conditions Min. Typ. Max. Unit
BVDS Drain-source Breakdown Voltage ID=250uA,VGS=0V 650 V VDS =650V, VGS =0V, IDSS Zero Gate Voltage Drain Current 50 μA TJ=25。C VDS =0 V ; IGSS Gate-body Leakage Current 10 250 nA VGS =-8 to 18V VGS(th) Gate Threshold Voltage VDS= VGS, ID=1mA 1.5 1.9 2.5 V VGSon Recommended turn-on Voltage 15 V Static VGSoff Recommended turn-of Voltage -3 V VGS=15V, ID=2A 320 450 mΩ RDS(on) Static Drain-source On Resistance VGS=15V,ID=2A 500 mΩ TJ=150°C 2 Document Outline Description The values are based on the junction-to case therm 0 2 4 6 16 14 10 6 2 Fig5. Transfer Characteristic Fig7.Threshold Voltage vs. Temperature 0 5 Fig9. 3rd Quadrant Characteristic at 25 oC -10 -8 -6 -2 5 Fig11. Capacitances vs. Drain-Source Fig13. Switching Energy vs. Drain Current Fig15. Switching Energy vs. Temperature Fig17.Transient Thermal Impedance Fig16. Switching Times vs. RG(ext) Package Drawing: