MBR3035CT – MBR30150CT Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating CurveFig.2 Typical Junction Capacitance 35 10000 ) A( 30 T N MBR3035CT-3045CT RE 25 ) F p( MBR3050CT-3060CT CUR 20 E RD NC A A 1000 MBR3090CT-30150CT 15 CIT A ORW P F 10 CA GE RA E 5 V f=1.0MHz A Vsig=50mVp-p 0 100 25 50 75 100 125 150 0.1 1 10 100 CASE TEMPERATURE (°C) REVERSE VOLTAGE (V) Fig.3 Typical Reverse CharacteristicsFig.4 Typical Forward Characteristics ) A) 100 100 A 10 m ( MBR3035CT-3045CT NT NT MBR3050CT-30150CT E E 10 RR M UF B 1 R D 3 L 05 W 0 CT-3060CT RR 1 CU D CU 10 E T =125°C MBR3035CT-3045CT R 1 J A T =125°C RS J E ) T =25°C J V A ORW ( 0.1 F RE 0.1 T =75°C J MBR30150CT OUS 1 OUS T =25°C NE NE J MBR3090CT-30100CT 0.01 A A T 0.01 T N N Pulse width 300μs A A T T 1% duty cycle Pulse width INS 0.001 INS 0.1 0.001 10 20 30 40 50 60 70 80 90 100 0.1 0.3 0.5 0.7 0.9 1.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FORWARD VOLTAGE (V) Fig.5 Maximum Non-Repetitive Forward Surge Current 225 ) 200 A( 8.3ms single half sine wave NT 175 RE 150 UR C 125 RGE U S 100 RD A 75 ORW 50 F K A E 25 P 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 4 Version: K2104