Datasheet JX3S0040090M (JX Semiconductor) - 3

JX3S0040090M Typical Performance-Dynamic Symbol Parameter Test Conditions Min. Typ. Max. Unit
Ciss Input Capacitance 1886 pF VDS=600V,f=1MHZ , Coss Output Capacitance 150 pF VAC=25mV Crss Reverse Transfer Capacitance 9 pF gfs Transconductance VDS=20V , ID=30A 18 S EOSS COSS Stored Energy VDS=600V,f=1MHZ 22 μJ EON Turn-On Energy (Body Diode) VDS=600V,VGS=-5/20V， 220 μJ ID=20A ，L=100uH EOFF Turn-Of Energy (Body Diode) TJ=15 0C 45 μJ Qg Total Gate Charge 81 nC VDS=600V, VGS=-5V/20V, Qgs Gate-source Charge 21 nC ID = 30A Qgd Gate-Drain Charge 21 nC RG (int) Internal Gate Resistance f=1MHz,VAC=25mV 3.5 Ω td(on) Turn-on Delay Time V 12 DS=600V,VGS=-5V/20V, ns tr Rise Time ID =30A, L=100 μH 35 ns td(off) Turn-off Delay Time Rext=2.5Ω 22 ns tf Fal Time 9 ns
Typical Performance-Reverse Diode(TJ = 25 unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS=0V,IF=15A,TJ=25C 5.2 6 V VFSD Forward Voltage VGS=0V,IF=15A,TJ=150C 4.8 6 V Is Continuous Diode Forward Current VGS=0V ，TC=25C 30.5 A trr Reverse Recovery Time VGS=-5 V, IF=30 A, 36 nS Qrr Reverse Recovery Charge VR=600 V, TJ=150C 160 nC di/dt= 2400 A/μs Irrm Peak Reverse Recovery Current 10.5 A
Thermal Characteristics
Symbol Parameter Value. Unit  R JC Thermal Resistance, Junction-to-Case 0.38 C/W  R JA Thermal Resistance, Junction-to-Ambient 40 C/W The values are based on the junction-to case thermal impedance which is measured with the device mounted to a large heat sink assuming maximum junction temperature of Tj(max)=150C 3 Document Outline Fig1. Output characteristics (TJ = 25 °C) Fig2. Output characteristics (TJ = 150 °C) Fig3.Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig6. Body Diode Characteristic at 25 ºC Fig7.Threshold Voltage vs. Temperature Fig9. 3rd Quadrant Characteristic at 25 ºC Fig8. Gate Charge Characteristics Fig10. Output Capacitor Stored Energy Fig11. Capacitances vs. Drain-Source Fig12. Max Power Dissipation Derating Vs TC Fig13. Switching Energy vs. Drain Current Fig15. Switching Energy vs. Temperature Fig14. Switching Energy vs. RG(ext) Fig16. Switching Times vs. RG(ext) Fig17.Transient Thermal Impedance Fig18. Safe Operating Area