Datasheet HER308 (Taiwan Semiconductor)

HerstellerTaiwan Semiconductor
Beschreibung75ns, 3A, 1000V, High Efficient Recovery Rectifier in DO-201AD package
Seiten / Seite6 / 1 — HER301G – HER308G. 3A, 50V - 1000V High Efficient Rectifier. FEATURES. …
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DokumentenspracheEnglisch

HER301G – HER308G. 3A, 50V - 1000V High Efficient Rectifier. FEATURES. KEY PARAMETERS. PARAMETER. VALUE. UNIT. APPLICATIONS

Datasheet HER308 Taiwan Semiconductor

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HER301G – HER308G
Taiwan Semiconductor
3A, 50V - 1000V High Efficient Rectifier FEATURES KEY PARAMETERS
● AEC-Q101 qualified available
PARAMETER VALUE UNIT
● High current capability, Low VF I ● High reliability F 3 A ● High surge current capability VRRM 50 - 1000 V ● Low power loss, high efficiency IFSM 125 A ● RoHS Compliant T ● J MAX 150 °C Halogen-free according to IEC 61249-2-21 Package DO-201AD
APPLICATIONS
Configuration Single die ● DC to DC converter ● Switching mode converters and inverters ● Freewheeling application
MECHANICAL DATA
● Case: DO-201AD ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Pure tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 2 whisker test ● Polarity: Indicated by cathode band ● Weight: 1.10g (approximately)
DO-201AD ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted)
HER HER HER HER HER HER HER HER PARAMETER SYMBOL UNIT 301G 302G 303G 304G 305G 306G 307G 308G
Marking code on the HER HER HER HER HER HER HER HER device 301G 302G 303G 304G 305G 306G 307G 308G Repetitive peak reverse V voltage RRM 50 100 200 300 400 600 800 1000 V Reverse voltage, total rms V value R(RMS) 35 70 140 210 280 420 560 700 V Forward current IF 3 A Surge peak forward current, 8.3ms single half I sine wave superimposed FSM 125 A on rated load Junction temperature TJ -55 to +150 °C Storage temperature TSTG -55 to +150 °C 1 Version: I2105