Datasheet IRFP450N (Vishay) - 6
| Hersteller | Vishay |
| Beschreibung | Power MOSFET in TO-247 package |
| Seiten / Seite | 8 / 6 — IRFP450N, SiHFP450N. Fig. 12a - Unclamped Inductive Test Circuit. Fig. … |
| Dateiformat / Größe | PDF / 187 Kb |
| Dokumentensprache | Englisch |
IRFP450N, SiHFP450N. Fig. 12a - Unclamped Inductive Test Circuit. Fig. 12b - Unclamped Inductive Waveforms
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Textversion des Dokuments
IRFP450N, SiHFP450N
Vishay Siliconix 15 V VDS tp L Driver VDS R D.U.T. G + A - VDD IAS A 20 V IAS t 0.01 p Ω
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
300 J) ID m TOP 6.3A 250 gy ( 8.9A er BOTTOM 14A n 200 anche E al 150 v e A ls u 100 P e ingl 50 S , ASE 0 25 50 75 100 125 150 Starting T , Junction Temperature ( C ° ) J
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator Same type as D.U.T. Q 50 kΩ G VGS 12 V 0.2 µF 0.3 µF Q Q GS GD + V D.U.T. DS - VG VGS 3 mA Charge I I G D Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
www.vishay.com Document Number: 91232 6 S-Pending-Rev. b, 26-Jun-08 Document Outline Datasheet Disclaimer
Vishay Siliconix 15 V VDS tp L Driver VDS R D.U.T. G + A - VDD IAS A 20 V IAS t 0.01 p Ω
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
300 J) ID m TOP 6.3A 250 gy ( 8.9A er BOTTOM 14A n 200 anche E al 150 v e A ls u 100 P e ingl 50 S , ASE 0 25 50 75 100 125 150 Starting T , Junction Temperature ( C ° ) J
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator Same type as D.U.T. Q 50 kΩ G VGS 12 V 0.2 µF 0.3 µF Q Q GS GD + V D.U.T. DS - VG VGS 3 mA Charge I I G D Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
www.vishay.com Document Number: 91232 6 S-Pending-Rev. b, 26-Jun-08 Document Outline Datasheet Disclaimer