Datasheet IRFP450N (Vishay) - 4
| Hersteller | Vishay |
| Beschreibung | Power MOSFET in TO-247 package |
| Seiten / Seite | 8 / 4 — IRFP450N, SiHFP450N. Fig. 5 - Typical Capacitance vs. Drain-to-Source … |
| Dateiformat / Größe | PDF / 187 Kb |
| Dokumentensprache | Englisch |
IRFP450N, SiHFP450N. Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
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IRFP450N, SiHFP450N
Vishay Siliconix 100000 V 100 GS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED C 10000 rss = Cgd Coss = Cds + Cgd ) F p( Ciss 10 e 1000 c n at T = 150 C ° i J c a p a 100 Coss C , C 1 10 Crss I , Reverse Drain Current (A) SD T = 25 C ° J 1 V = 0 V GS 0.1 1 10 100 1000 0.2 0.4 0.6 0.8 1.0 1.2 1.4 V V ,Source-to-Drain Voltage (V) DS, Drain-to-Source Voltage (V) SD
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage
1000 20 ID = 14A OPERATION IN THIS AREA LIMITED BY R V = 400V DS(on) DS ) A 16 V = 250V DS ( V = 100V t DS 100 n erruC 12 e cru 10 o S- 100μsec 8 ot-niarD 1 1msec , 4 GS Tc = 25°C V , Gate-to-Source Voltage (V) I D Tj = 150°C FOR TEST CIRCUIT 10msec Single Pulse SEE FIGURE 13 0 0.1 0 20 40 60 80 1 10 100 1000 10000 Q , Total Gate Charge (nC) G VDS , Drain-toSource Voltage (V)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area
www.vishay.com Document Number: 91232 4 S-Pending-Rev. b, 26-Jun-08 Document Outline Datasheet Disclaimer
Vishay Siliconix 100000 V 100 GS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED C 10000 rss = Cgd Coss = Cds + Cgd ) F p( Ciss 10 e 1000 c n at T = 150 C ° i J c a p a 100 Coss C , C 1 10 Crss I , Reverse Drain Current (A) SD T = 25 C ° J 1 V = 0 V GS 0.1 1 10 100 1000 0.2 0.4 0.6 0.8 1.0 1.2 1.4 V V ,Source-to-Drain Voltage (V) DS, Drain-to-Source Voltage (V) SD
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage
1000 20 ID = 14A OPERATION IN THIS AREA LIMITED BY R V = 400V DS(on) DS ) A 16 V = 250V DS ( V = 100V t DS 100 n erruC 12 e cru 10 o S- 100μsec 8 ot-niarD 1 1msec , 4 GS Tc = 25°C V , Gate-to-Source Voltage (V) I D Tj = 150°C FOR TEST CIRCUIT 10msec Single Pulse SEE FIGURE 13 0 0.1 0 20 40 60 80 1 10 100 1000 10000 Q , Total Gate Charge (nC) G VDS , Drain-toSource Voltage (V)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area
www.vishay.com Document Number: 91232 4 S-Pending-Rev. b, 26-Jun-08 Document Outline Datasheet Disclaimer