Datasheet TIP35C, TIP36C (STMicroelectronics)
| Hersteller | STMicroelectronics |
| Beschreibung | Complementary power transistors in TO-247 package |
| Seiten / Seite | 9 / 1 — TIP35C TIP36C. Features. Applications. Description. TO-247. Figure 1. … |
| Dateiformat / Größe | PDF / 195 Kb |
| Dokumentensprache | Englisch |
TIP35C TIP36C. Features. Applications. Description. TO-247. Figure 1. Internal schematic diagrams. Table 1. Device summary. Order code
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TIP35C TIP36C
Complementary power transistors
Features
. ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors
Applications
■ General purpose 3 ■ Audio amplifier 2 1
Description TO-247
The devices are manufactured in planar technology with “base island” layout. The
Figure 1. Internal schematic diagrams
resulting transistors show exceptional high gain performance coupled with very low saturation voltage.
Table 1. Device summary Order code Marking Package Packaging
TIP35C TIP35C TO-247 Tube TIP36C TIP36C September 2008 Rev 5 1/9 www.st.com 9 Document Outline Figure 1. Internal schematic diagrams Table 1. Device summary 1 Electrical ratings Table 2. Absolute maximum ratings Table 3. Thermal data 2 Electrical characteristics Table 4. Electrical characteristics 2.1 Electrical characteristic (curves) Figure 2. DC current gain for NPN type Figure 3. DC current gain for PNP type Figure 4. DC current gain for NPN type Figure 5. DC current gain for PNP type Figure 6. Collector-emitter saturation voltage for NPN type Figure 7. Collector-emitter saturation voltage for PNP type Figure 8. Base-emitter saturation voltage for NPN type Figure 9. Base-emitter saturation voltage for PNP type Figure 10. Base-emitter on voltage for NPN type Figure 11. Base-emitter on voltage for PNP type 3 Package mechanical data 4 Revision history Table 5. Document revision history
Complementary power transistors
Features
. ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors
Applications
■ General purpose 3 ■ Audio amplifier 2 1
Description TO-247
The devices are manufactured in planar technology with “base island” layout. The
Figure 1. Internal schematic diagrams
resulting transistors show exceptional high gain performance coupled with very low saturation voltage.
Table 1. Device summary Order code Marking Package Packaging
TIP35C TIP35C TO-247 Tube TIP36C TIP36C September 2008 Rev 5 1/9 www.st.com 9 Document Outline Figure 1. Internal schematic diagrams Table 1. Device summary 1 Electrical ratings Table 2. Absolute maximum ratings Table 3. Thermal data 2 Electrical characteristics Table 4. Electrical characteristics 2.1 Electrical characteristic (curves) Figure 2. DC current gain for NPN type Figure 3. DC current gain for PNP type Figure 4. DC current gain for NPN type Figure 5. DC current gain for PNP type Figure 6. Collector-emitter saturation voltage for NPN type Figure 7. Collector-emitter saturation voltage for PNP type Figure 8. Base-emitter saturation voltage for NPN type Figure 9. Base-emitter saturation voltage for PNP type Figure 10. Base-emitter on voltage for NPN type Figure 11. Base-emitter on voltage for PNP type 3 Package mechanical data 4 Revision history Table 5. Document revision history