Datasheet IRFL024N (Infineon) - 2
| Hersteller | Infineon |
| Beschreibung | 55V Single N-Channel IR MOSFET in SOT-223 package |
| Seiten / Seite | 9 / 2 — Electrical Characteristics @ TJ = 25°C (unless otherwise specified). … |
| Dateiformat / Größe | PDF / 146 Kb |
| Dokumentensprache | Englisch |
Electrical Characteristics @ TJ = 25°C (unless otherwise specified). Parameter. Min. Typ. Max. Units. Conditions
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IRFL024NPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.056 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.075 Ω VGS = 10V, ID = 2.8A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 3.0 ––– ––– S VDS = 25V, ID = 1.68A ––– ––– 25 V I µA DS = 55V, VGS = 0V DSS Drain-to-Source Leakage Current ––– ––– 250 VDS = 44V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V I nA GSS Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V Qg Total Gate Charge ––– ––– 18.3 ID = 1.68A Qgs Gate-to-Source Charge ––– ––– 3.0 nC VDS = 44V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 7.7 VGS = 10V, See Fig. 6 and 9 td(on) Turn-On Delay Time ––– 8.1 ––– VDD = 28V tr Rise Time ––– 13.4 ––– ID = 1.68A ns td(off) Turn-Off Delay Time ––– 22.2 ––– RG = 24Ω tf Fall Time ––– 17.7 ––– RD = 17Ω, See Fig. 10 Ciss Input Capacitance ––– 400 ––– VGS = 0V Coss Output Capacitance ––– 145 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 60 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol 2.8 (Body Diode) showing the A ISM Pulsed Source Current integral reverse 11.2 (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS =1.68A, VGS = 0V trr Reverse Recovery Time ––– 35 53 ns TJ = 25°C, IF = 1.68A Qrr Reverse RecoveryCharge ––– 50 75 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by I ≤ SD 1.68A, di/dt ≤ 155A/µs, VDD ≤ V(BR)DSS, max. junction temperature. ( See fig. 11 ) TJ ≤ 150°C Starting T J = 25°C, L = 54.7 mH Pulse width ≤ 300µs; duty cycle ≤ 2%. RG = 25Ω, IAS = 2.8A. (See Figure 12) 2 www.irf.com
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.056 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.075 Ω VGS = 10V, ID = 2.8A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 3.0 ––– ––– S VDS = 25V, ID = 1.68A ––– ––– 25 V I µA DS = 55V, VGS = 0V DSS Drain-to-Source Leakage Current ––– ––– 250 VDS = 44V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V I nA GSS Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V Qg Total Gate Charge ––– ––– 18.3 ID = 1.68A Qgs Gate-to-Source Charge ––– ––– 3.0 nC VDS = 44V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 7.7 VGS = 10V, See Fig. 6 and 9 td(on) Turn-On Delay Time ––– 8.1 ––– VDD = 28V tr Rise Time ––– 13.4 ––– ID = 1.68A ns td(off) Turn-Off Delay Time ––– 22.2 ––– RG = 24Ω tf Fall Time ––– 17.7 ––– RD = 17Ω, See Fig. 10 Ciss Input Capacitance ––– 400 ––– VGS = 0V Coss Output Capacitance ––– 145 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 60 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol 2.8 (Body Diode) showing the A ISM Pulsed Source Current integral reverse 11.2 (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS =1.68A, VGS = 0V trr Reverse Recovery Time ––– 35 53 ns TJ = 25°C, IF = 1.68A Qrr Reverse RecoveryCharge ––– 50 75 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by I ≤ SD 1.68A, di/dt ≤ 155A/µs, VDD ≤ V(BR)DSS, max. junction temperature. ( See fig. 11 ) TJ ≤ 150°C Starting T J = 25°C, L = 54.7 mH Pulse width ≤ 300µs; duty cycle ≤ 2%. RG = 25Ω, IAS = 2.8A. (See Figure 12) 2 www.irf.com