Datasheet 2SB772 (Inchange Semiconductor)
| Hersteller | Inchange Semiconductor |
| Beschreibung | Silicon PNP Power Transistors in TO-126 package |
| Seiten / Seite | 5 / 1 — Inchange Semiconductor. Product Specification. Silicon PNP Power … |
| Dateiformat / Größe | PDF / 106 Kb |
| Dokumentensprache | Englisch |
Inchange Semiconductor. Product Specification. Silicon PNP Power Transistors 2SB772. DESCRIPTION. APPLICATIONS. PINNING
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Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB772 DESCRIPTION
・ ・With TO-126 package ・Complement to type 2SD882
APPLICATIONS
・Suited for the output stage of 3 watts audio amplifier ,voltage regulator ,DC- DC converter and relay driver
PINNING PIN DESCRIPTION
1 Emitter Collector;connected to 2 mounting base 3 Base
Absolute maximum ratings(Ta=25
℃
) SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collector-base voltage Open emitter -40 V VCEO Collector-emitter voltage Open base -30 V VEBO Emitter-base voltage Open collector -5 V IC Collector current (DC) -3 A ICM Collector current-Peak -7 A Ta=25℃ 1.0 PD Total power dissipation W TC=25℃ 10 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃
・ ・With TO-126 package ・Complement to type 2SD882
APPLICATIONS
・Suited for the output stage of 3 watts audio amplifier ,voltage regulator ,DC- DC converter and relay driver
PINNING PIN DESCRIPTION
1 Emitter Collector;connected to 2 mounting base 3 Base
Absolute maximum ratings(Ta=25
℃
) SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collector-base voltage Open emitter -40 V VCEO Collector-emitter voltage Open base -30 V VEBO Emitter-base voltage Open collector -5 V IC Collector current (DC) -3 A ICM Collector current-Peak -7 A Ta=25℃ 1.0 PD Total power dissipation W TC=25℃ 10 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃