Datasheet 2SB649 (Unisonic Technologies) - 5
| Hersteller | Unisonic Technologies |
| Beschreibung | Bipolar Power General Purpose Transistor |
| Seiten / Seite | 7 / 5 — 2SB649/A. PNP SILICON TRANSISTOR. ELECTRICAL CHARACTERISTICS. … |
| Dateiformat / Größe | PDF / 304 Kb |
| Dokumentensprache | Englisch |
2SB649/A. PNP SILICON TRANSISTOR. ELECTRICAL CHARACTERISTICS. CLASSIFICATION OF hFE1. UNISONIC TECHNOLOGIES CO., LTD
Modelllinie für dieses Datenblatt
Textversion des Dokuments
2SB649/A PNP SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS
(TA=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector to Base Breakdown Voltage BVCBO IC=-1mA, IE=0 -180 V Collector to Emitter 2SB649 -120 BV V Breakdown Voltage CEO IC=-10mA, RBE= 2SB649A -160 Emitter to Base Breakdown Voltage BVEBO IE=-1mA, IC=0 -5 V Collector Cut-off Current ICBO VCB=-160V, IE=0 -10 μA hFE1 VCE=-5V, IC=-150mA (note) 60 320 2SB649 h DC Current Gain FE2 VCE=-5V, IC=-500mA (note) 30 hFE1 VCE=-5V, IC=-150mA (note) 60 200 2SB649A hFE2 VCE=-5V, IC=-500mA (note) 30 Collector-Emitter Saturation Voltage VCE(SAT) IC=-600mA, IB=-50mA -0.5 V Base-Emitter Voltage VBE VCE=-5V, IC=-150mA -1.5 V Current Gain Bandwidth Product fT VCE=-5V, IC=-150mA 140 MHz Output Capacitance Cob VCB=-10V, IE=0, f=1MHz 27 pF Note: Pulse test.
CLASSIFICATION OF hFE1
RANK RANGE B C D 2SB649 60-120 100-200 160-320 2SB649A 60-120 100-200 -
UNISONIC TECHNOLOGIES CO., LTD
5 of 7
www.unisonic.com.tw
QW-R204-006.N
(TA=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector to Base Breakdown Voltage BVCBO IC=-1mA, IE=0 -180 V Collector to Emitter 2SB649 -120 BV V Breakdown Voltage CEO IC=-10mA, RBE= 2SB649A -160 Emitter to Base Breakdown Voltage BVEBO IE=-1mA, IC=0 -5 V Collector Cut-off Current ICBO VCB=-160V, IE=0 -10 μA hFE1 VCE=-5V, IC=-150mA (note) 60 320 2SB649 h DC Current Gain FE2 VCE=-5V, IC=-500mA (note) 30 hFE1 VCE=-5V, IC=-150mA (note) 60 200 2SB649A hFE2 VCE=-5V, IC=-500mA (note) 30 Collector-Emitter Saturation Voltage VCE(SAT) IC=-600mA, IB=-50mA -0.5 V Base-Emitter Voltage VBE VCE=-5V, IC=-150mA -1.5 V Current Gain Bandwidth Product fT VCE=-5V, IC=-150mA 140 MHz Output Capacitance Cob VCB=-10V, IE=0, f=1MHz 27 pF Note: Pulse test.
CLASSIFICATION OF hFE1
RANK RANGE B C D 2SB649 60-120 100-200 160-320 2SB649A 60-120 100-200 -
UNISONIC TECHNOLOGIES CO., LTD
5 of 7
www.unisonic.com.tw
QW-R204-006.N