Datasheet VS-HOT200C080 (Vishay) - 6

VS-HOT200C080
www.vishay.com Vishay Semiconductors Axis Title Axis Title 100 10000 1.4 10000 n V = 0 V V = 0 V GS GS rai 1.2 97.5 ource ) urce-to-D o 1 1000 (V 1000 S n-to-S 95 e rai I = 5 mA ne D ne ltage iode g D o 0.8 D a lt 1st li I = 100 mA 1st li dy D DSS n V 92.5 o Vo ow 0.6 100 d 100 l BV d B a e ic liz p reak 90 a B Ty 0.4 orm N 2nd l - 87.5 10 0.2 10 SDV -50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175 ine T (°C) T (°C) J J nd l Fig. 13 - Typical Drain to Source Breakdown Voltage vs. Fig. 16 - Normalized Body Diode Source-to-Drain vs. Temperature Temperature Axis Title Axis Title 100 000 10000 10000 t = 100 μs p C 1000 iss ) t = 250 μs p 10 000 (A ) F p rrent 1000 C u 1000 oss ine ce ( 1000 100 ne ne ine itan t = 500 μs ne ne p 2nd l c a ource C t = 1 ms 1st li 2nd l 2nd li -S p 1st li 2nd li 100 Cap C n t = 10 ms rss p 100 rai t = 100 ms 100 D 10 p - 10 I DS T = 25 °C f = 10 kHz, C R = 0.77 °C/W V = 0 V thJC GS BV limited Single pulse DSS 1 10 1 10 1 10 100 0.1 1 10 100 V - Drain to Source Voltage (V) V - Drain-Source Voltage (V) DS DS Fig. 14 - Capacitance vs. Drain-to-Source Voltage Fig. 17 - Safe Operating Area Axis Title 15 10000 14 13 12 11 10 1000 9 ) ine (V 8 ne ne GS 7 V 1st li 2nd l 2nd li 6 5 100 4 3 T = 25 °C 2 J V = 48 V DS 1 I = 80 A D 0 10 0 25 50 75 100 125 150 175 Q (nC) G Fig. 15 - Capacitance vs. Drain-to-Source Voltage Revision: 27-Jan-2026
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