Datasheet SS32, SS33, SS34, SS35, SS36 (Vishay) - 3

SS32, SS33, SS34, SS35, SS36 www.vishay.com Vishay General Semiconductor 100 10000 1000 ) (A T = 150 °C J 10 rrent u 1000 C e rd a tance (pF) lin 1 orw 100 F T = 25 °C J 2nd s 100 0.1 T = -40 °C nction Capaci J u J T = 25 °C stantaneou J In f = 1.0 MHz SS32 thru SS34 V = 50 mV SS35 and SS36 sig p-p 0.01 10 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance 1000 10000 ) 100 A 100 TJ = 150 °C (m 10 T (°C/W) J = 125 °C urrent 1 1000 C 10 TJ = 75 °C 0.1 e line verse lin e Impedance R 0.01 1st 2nd s TJ = 25 °C mal 0.001 100 1 0.0001 T stantaneou J = -40 °C 0.00001 In ansient TherrT 0.000001 10 0.1 0 20 40 60 80 100 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Current Characteristics Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters) SMC (DO-214AB) Cathode Band Mounting Pad Layout 0.185 (4.69) MAX. 0.126 (3.20) 0.246 (6.22) 0.114 (2.90) 0.220 (5.59) 0.126 (3.20) MIN. 0.280 (7.11) 0.260 (6.60) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.320 (8.13) REF. 0.103 (2.62) 0.079 (2.06) 0.060 (1.52) 0.008 (0.2) 0.030 (0.76) 0 (0) 0.320 (8.13) 0.305 (7.75) Revision: 23-Apr-2020 3 Document Number: 88751 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000