Datasheet SI2310 (Youtai)
| Hersteller | Youtai |
| Beschreibung | 60V N-ChanneI MOSFET in SOT-23 package |
| Seiten / Seite | 7 / 1 — UMW SI2310A. 1.Features. 2.Applications. 3.Pinning information. Pin. … |
| Dateiformat / Größe | PDF / 226 Kb |
| Dokumentensprache | Englisch |
UMW SI2310A. 1.Features. 2.Applications. 3.Pinning information. Pin. Symbol. Description. SOT-23. 4.Absolute Maximum Ratings TA= 25°C
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UMW SI2310A
60V N-ChanneI MOSFET
1.Features 2.Applications
VDS(V)=60V Load/Power Switching ID=3A Interfacing Switching RDS(ON)<80mΩ(VGS=10V) Logic Level Shift RDS(ON)<95mΩ(VGS=4.5V) Battery Management for Ultra Small Portable
3.Pinning information Pin Symbol Description SOT-23
3 D 1 G GATE 2 S SOURCE 3 D DRAIN 1 G 2 S
4.Absolute Maximum Ratings TA= 25°C Parameter Symbol Value Units
Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V TA=25°C 3 Continuous Drain Current ID TA=70°C 2.3 A Pulsed Drain Current * IDM 10 Power Dissipation TA=25°C PD 1.38 W Linear Derating Factor 0.01 W/°C Thermal Resistance.Junction-to-ambient RthJa 90 °C/W Junction and Storage Temperature Range TJ,TSTG -55 to 150 °C *2.Pulse width ≤ 300us ,duty cycle ≤ 2%. UTD Semiconductor Co.,Limited www.umw-ic.com Nov.2024 1 of 7
60V N-ChanneI MOSFET
1.Features 2.Applications
VDS(V)=60V Load/Power Switching ID=3A Interfacing Switching RDS(ON)<80mΩ(VGS=10V) Logic Level Shift RDS(ON)<95mΩ(VGS=4.5V) Battery Management for Ultra Small Portable
3.Pinning information Pin Symbol Description SOT-23
3 D 1 G GATE 2 S SOURCE 3 D DRAIN 1 G 2 S
4.Absolute Maximum Ratings TA= 25°C Parameter Symbol Value Units
Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V TA=25°C 3 Continuous Drain Current ID TA=70°C 2.3 A Pulsed Drain Current * IDM 10 Power Dissipation TA=25°C PD 1.38 W Linear Derating Factor 0.01 W/°C Thermal Resistance.Junction-to-ambient RthJa 90 °C/W Junction and Storage Temperature Range TJ,TSTG -55 to 150 °C *2.Pulse width ≤ 300us ,duty cycle ≤ 2%. UTD Semiconductor Co.,Limited www.umw-ic.com Nov.2024 1 of 7