Datasheet BZX85 (Vishay) - 3
| Hersteller | Vishay |
| Beschreibung | Silicon Planar Power Zener Diodes in DO-41 (DO-204AL) package |
| Seiten / Seite | 4 / 3 — BZX85. BASIC CHARACTERISTICS. PACKAGE DIMENSIONS. DO-41 (DO-204AL) |
| Revision | 2.9 |
| Dateiformat / Größe | PDF / 108 Kb |
| Dokumentensprache | Englisch |
BZX85. BASIC CHARACTERISTICS. PACKAGE DIMENSIONS. DO-41 (DO-204AL)
Modelllinie für dieses Datenblatt
- BZX85-B180 BZX85-C200 BZX85B10 BZX85B10-TAP BZX85B10-TR BZX85B100 BZX85B100-TAP BZX85B100-TR BZX85B11 BZX85B11-TAP BZX85B11-TR BZX85B110 BZX85B12 BZX85B12-TAP BZX85B12-TR BZX85B120 BZX85B13 BZX85B13-TAP BZX85B13-TR BZX85B130 BZX85B15 BZX85B15-TAP BZX85B15-TR BZX85B150 BZX85B16 BZX85B16-TAP BZX85B16-TR BZX85B160 BZX85B18 BZX85B18-TAP BZX85B18-TR BZX85B180 BZX85B20 BZX85B20-TAP BZX85B20-TR BZX85B200 BZX85B22 BZX85B22-TAP BZX85B22-TR BZX85B24 BZX85B24-TAP BZX85B24-TR BZX85B27 BZX85B27-TAP BZX85B27-TR BZX85B2V7 BZX85B2V7-TAP BZX85B2V7-TR BZX85B30 BZX85B30-TAP BZX85B30-TR BZX85B33 BZX85B33-TAP BZX85B33-TR BZX85B36 BZX85B36-TAP BZX85B36-TR BZX85B39 BZX85B39-TAP BZX85B39-TR BZX85B3V0 BZX85B3V0-TAP BZX85B3V0-TR BZX85B3V3 BZX85B3V3-TAP BZX85B3V3-TR BZX85B3V6 BZX85B3V6-TAP BZX85B3V6-TR BZX85B3V9 BZX85B3V9-TAP BZX85B3V9-TR BZX85B43 BZX85B43-TAP BZX85B43-TR BZX85B47 BZX85B47-TAP BZX85B47-TR BZX85B4V3 BZX85B4V3-TAP BZX85B4V3-TR BZX85B4V7 BZX85B4V7-TAP BZX85B4V7-TR BZX85B51 BZX85B51-TAP BZX85B51-TR BZX85B56 BZX85B56-TAP BZX85B56-TR BZX85B5V1 BZX85B5V1-TAP BZX85B5V1-TR BZX85B5V6 BZX85B5V6-TAP BZX85B5V6-TR BZX85B62 BZX85B62-TAP BZX85B62-TR BZX85B68 BZX85B68-TAP BZX85B68-TR BZX85B6V2 BZX85B6V2-TAP BZX85B6V2-TR BZX85B6V8 BZX85B6V8-TAP BZX85B6V8-TR BZX85B75 BZX85B75-TAP BZX85B75-TR BZX85B7V5 BZX85B7V5-TAP BZX85B7V5-TR BZX85B82 BZX85B82-TAP BZX85B82-TR BZX85B8V2 BZX85B8V2-TAP BZX85B8V2-TR BZX85B91 BZX85B91-TAP BZX85B91-TR BZX85B9V1 BZX85B9V1-TAP BZX85B9V1-TR BZX85C10 BZX85C10-TAP BZX85C10-TR BZX85C100 BZX85C100-TAP BZX85C100-TR BZX85C11 BZX85C11-TAP BZX85C11-TR BZX85C110 BZX85C12 BZX85C12-TAP BZX85C12-TR BZX85C120 BZX85C13 BZX85C13-TAP BZX85C13-TR BZX85C130 BZX85C15 BZX85C15-TAP BZX85C15-TR BZX85C150 BZX85C16 BZX85C16-TAP BZX85C16-TR BZX85C160 BZX85C18 BZX85C18-TAP BZX85C18-TR BZX85C180 BZX85C20 BZX85C20-TAP BZX85C20-TR BZX85C200 BZX85C22 BZX85C22-TAP BZX85C22-TR BZX85C24 BZX85C24-TAP BZX85C24-TR BZX85C27 BZX85C27-TAP BZX85C27-TR BZX85C2V7 BZX85C2V7-TAP BZX85C2V7-TR BZX85C30 BZX85C30-TAP BZX85C30-TR BZX85C33 BZX85C33-TAP BZX85C33-TR BZX85C36 BZX85C36-TAP BZX85C36-TR BZX85C39 BZX85C39-TAP BZX85C39-TR BZX85C3V0 BZX85C3V0-TAP BZX85C3V0-TR BZX85C3V3 BZX85C3V3-TAP BZX85C3V3-TR BZX85C3V6 BZX85C3V6-TAP BZX85C3V6-TR BZX85C3V9 BZX85C3V9-TAP BZX85C3V9-TR BZX85C43 BZX85C43-TAP BZX85C43-TR BZX85C47 BZX85C47-TAP BZX85C47-TR BZX85C4V3 BZX85C4V3-TAP BZX85C4V3-TR BZX85C4V7 BZX85C4V7-TAP BZX85C4V7-TR BZX85C51 BZX85C51-TAP BZX85C51-TR BZX85C56 BZX85C56-TAP BZX85C56-TR BZX85C5V1 BZX85C5V1-TAP BZX85C5V1-TR BZX85C5V6 BZX85C5V6-TAP BZX85C5V6-TR BZX85C62 BZX85C62-TAP BZX85C62-TR BZX85C68 BZX85C68-TAP BZX85C68-TR BZX85C6V2 BZX85C6V2-TAP BZX85C6V2-TR BZX85C6V8 BZX85C6V8-TAP BZX85C6V8-TR BZX85C75 BZX85C75-TAP BZX85C75-TR BZX85C7V5 BZX85C7V5-TAP BZX85C7V5-TR BZX85C82 BZX85C82-TAP BZX85C82-TR BZX85C8V2 BZX85C8V2-TAP BZX85C8V2-TR BZX85C91 BZX85C91-TAP BZX85C91-TR BZX85C9V1 BZX85C9V1-TAP BZX85C9V1-TR
Textversion des Dokuments
BZX85
www.vishay.com Vishay Semiconductors
BASIC CHARACTERISTICS
(Tamb = 25 °C, unless otherwise specified) 1400 mA 240 3V9 4V7 T = 25 °C 1200 j 200 1000 5V6 IZ 6V8 ipation (mW) 160 800 ss 8V2 10 600 120 12 400 80 - Power Di totP 200 40 0 0 0 50 100 150 200 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 V Tamb- Ambient Temperature (°C) V 18456 Z Fig. 1 - Admissible Power Dissipation vs. Ambient Temperature P Fig. 3 - Typical Breakdown Characteristics tot = f (Tamb) Axis Title mA 100 10000 60 T 15 18 T = 25 °C j = 150 °C j 22 10 50 I 27 T Z j = 75 °C 1000 40 1 ) 33 ine A ne ne (m 30 39 I F 1st li 2nd l 47 0.1 2nd li Tj = 25 °C 100 20 0.01 10 0 0.001 10 0 5 10 15 20 25 30 35 40 45 50 V 0 0.2 0.4 0.6 0.8 1 V 18457 V Z F (V) Fig. 2 - Typical Forward Current IF vs. Forward Voltage VF Fig. 4 - Typical Breakdown Characteristics
PACKAGE DIMENSIONS
in millimeters (inches):
DO-41 (DO-204AL)
Cathode identification 26 (1.024) min. 4.1 (0.161) max. 26 (1.024) min. 0.86 (0.034) max. 2.6 (0.102) max. 94 9368 Rev. 2.9, 17-Sep-2025
3
Document Number: 85607 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Semiconductors
BASIC CHARACTERISTICS
(Tamb = 25 °C, unless otherwise specified) 1400 mA 240 3V9 4V7 T = 25 °C 1200 j 200 1000 5V6 IZ 6V8 ipation (mW) 160 800 ss 8V2 10 600 120 12 400 80 - Power Di totP 200 40 0 0 0 50 100 150 200 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 V Tamb- Ambient Temperature (°C) V 18456 Z Fig. 1 - Admissible Power Dissipation vs. Ambient Temperature P Fig. 3 - Typical Breakdown Characteristics tot = f (Tamb) Axis Title mA 100 10000 60 T 15 18 T = 25 °C j = 150 °C j 22 10 50 I 27 T Z j = 75 °C 1000 40 1 ) 33 ine A ne ne (m 30 39 I F 1st li 2nd l 47 0.1 2nd li Tj = 25 °C 100 20 0.01 10 0 0.001 10 0 5 10 15 20 25 30 35 40 45 50 V 0 0.2 0.4 0.6 0.8 1 V 18457 V Z F (V) Fig. 2 - Typical Forward Current IF vs. Forward Voltage VF Fig. 4 - Typical Breakdown Characteristics
PACKAGE DIMENSIONS
in millimeters (inches):
DO-41 (DO-204AL)
Cathode identification 26 (1.024) min. 4.1 (0.161) max. 26 (1.024) min. 0.86 (0.034) max. 2.6 (0.102) max. 94 9368 Rev. 2.9, 17-Sep-2025
3
Document Number: 85607 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000