Datasheet 74AVC1T45NX (Toshiba) - 4

74AVC1T45NX 9. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Note Rating Unit Supply voltage VCCA -0.5 to 4.6 V VCCB -0.5 to 4.6 Input voltage (DIR) VIN -0.5 to 4.6 V Bus I/O voltage VI/OA (Note 1) -0.5 to 4.6 V (Note 2) -0.5 to VCCA + 0.5 VI/OB (Note 1) -0.5 to 4.6 (Note 2) -0.5 to VCCB + 0.5 Input diode current IIK -50 mA I/O diode current II/OK (Note 3) -50 mA Output current IOUTA ±50 mA IOUTB ±50 VCC/ground current per supply pin ICCA 100 mA ICCB 100 Power dissipation PD 200 mW Storage temperature Tstg -65 to 150 � Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Input state or high impedance state. Note 2: Output state. IOUT absolute maximum rating must be observed. Note 3: VOUT < GND ©2026 4 Toshiba Electronic Devices & Storage Corporation 2026-04-21 Rev.1.0.A