Datasheet TP65B110HRU (Renesas) - 4
| Hersteller | Renesas |
| Beschreibung | 650V 110mΩ High-Voltage GaN Bidirectional Switch in TOLT Package |
| Seiten / Seite | 15 / 4 — TP65B110HRU Datasheet. 2. Specifications 2.1. Absolute Maximum Ratings. … |
| Dateiformat / Größe | PDF / 1.6 Mb |
| Dokumentensprache | Englisch |
TP65B110HRU Datasheet. 2. Specifications 2.1. Absolute Maximum Ratings. Caution. Symbol. Parameter. Limit Value. Unit. 2.2
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TP65B110HRU Datasheet 2. Specifications 2.1 Absolute Maximum Ratings
Tc = 25°C unless otherwise stated.
Caution
: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions can adversely impact product reliability and result in failures not covered by warranty.
Symbol Parameter Limit Value Unit
VSS(AC) Off-state Continuous AC Voltage between S1 and S2 (TJ = -55°C to 150°C) 650 Vpk VSS(DC) Off-state Continuous DC Voltage between S1 and S2 (TJ = -55°C to 150°C) ±650 VSS(TR) Off-state Transient Voltage between S1 and S2 [1] ±800 V VGS,max Continuous Gate to Source Voltage ±12 VGS,max (TR) Transient Gate to Source Voltage ±20 PD Maximum Power Dissipation at TC = 25°C 156 W Continuous Source Current at TC = 25°C [2] ±24 ISS Continuous Source Current at TC = 100°C [2] ±15 A ISSM Pulsed Source Current (pulse width: 10µs) ±110 TC Case -55 to +150 °C Operating Temperature Junction TJ Junction -55 to +150 °C TS Storage Temperature -55 to +150 °C TSOLD Reflow Soldering Temperature [3] 260 °C 1. < 10µs events, 60s cumulative. 2. Both gates on. 3. Reflow MSL3.
2.2 Thermal Specifications Symbol Parameter Typical Value Unit
RΘJC Junction-to-case 0.8 °C/W RΘJA Junction-to-ambient 50
2.3 Recommended Operating Conditions Symbol Parameter Minimum Typical Maximum Unit
VGS,off Off-State Gate Voltage - 0 0 V VGS,on On-State Gate Voltage 7 9 - R07DS1683EU0100 Rev.1.00 Page 4 Mar 10, 2026 Document Outline 1. Pin Information 1.1 Pin Assignments 1.2 Pin Descriptions 2. Specifications 2.1 Absolute Maximum Ratings 2.2 Thermal Specifications 2.3 Recommended Operating Conditions 2.4 Gate Characteristics 2.5 On-State Characteristics 2.6 Off-State Characteristics 2.7 Dynamic Characteristics 2.8 Diode Characteristics 3. Typical Characteristics 4. Test Circuits and Waveforms 5. Modes of Operation 6. Device Architecture 7. Design Considerations 8. Package Outline Drawings 9. Related Information 10. Ordering Information 11. Revision History
TP65B110HRU Datasheet 2. Specifications 2.1 Absolute Maximum Ratings
Tc = 25°C unless otherwise stated.
Caution
: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions can adversely impact product reliability and result in failures not covered by warranty.
Symbol Parameter Limit Value Unit
VSS(AC) Off-state Continuous AC Voltage between S1 and S2 (TJ = -55°C to 150°C) 650 Vpk VSS(DC) Off-state Continuous DC Voltage between S1 and S2 (TJ = -55°C to 150°C) ±650 VSS(TR) Off-state Transient Voltage between S1 and S2 [1] ±800 V VGS,max Continuous Gate to Source Voltage ±12 VGS,max (TR) Transient Gate to Source Voltage ±20 PD Maximum Power Dissipation at TC = 25°C 156 W Continuous Source Current at TC = 25°C [2] ±24 ISS Continuous Source Current at TC = 100°C [2] ±15 A ISSM Pulsed Source Current (pulse width: 10µs) ±110 TC Case -55 to +150 °C Operating Temperature Junction TJ Junction -55 to +150 °C TS Storage Temperature -55 to +150 °C TSOLD Reflow Soldering Temperature [3] 260 °C 1. < 10µs events, 60s cumulative. 2. Both gates on. 3. Reflow MSL3.
2.2 Thermal Specifications Symbol Parameter Typical Value Unit
RΘJC Junction-to-case 0.8 °C/W RΘJA Junction-to-ambient 50
2.3 Recommended Operating Conditions Symbol Parameter Minimum Typical Maximum Unit
VGS,off Off-State Gate Voltage - 0 0 V VGS,on On-State Gate Voltage 7 9 - R07DS1683EU0100 Rev.1.00 Page 4 Mar 10, 2026 Document Outline 1. Pin Information 1.1 Pin Assignments 1.2 Pin Descriptions 2. Specifications 2.1 Absolute Maximum Ratings 2.2 Thermal Specifications 2.3 Recommended Operating Conditions 2.4 Gate Characteristics 2.5 On-State Characteristics 2.6 Off-State Characteristics 2.7 Dynamic Characteristics 2.8 Diode Characteristics 3. Typical Characteristics 4. Test Circuits and Waveforms 5. Modes of Operation 6. Device Architecture 7. Design Considerations 8. Package Outline Drawings 9. Related Information 10. Ordering Information 11. Revision History