Datasheet EPC23111 (Efficient Power Conversion) - 6
| Hersteller | Efficient Power Conversion |
| Beschreibung | 100V, 20 A ePower Stage IC |
| Seiten / Seite | 17 / 6 — eGaN® IC DATASHEET. Dynamic Characteristics Parameter Definition |
| Dateiformat / Größe | PDF / 1.9 Mb |
| Dokumentensprache | Englisch |
eGaN® IC DATASHEET. Dynamic Characteristics Parameter Definition
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eGaN® IC DATASHEET
EPC23111
Dynamic Characteristics Parameter Definition Figure 3: Logic Input to Output Switching Node Timing Diagram (current exiting from SW node)
5 V
PWM
50% 0 V
EN
5 V 0 V ~48 V ~700 mV
SW
~-700 mV ~0 V t_delayLS_off t_delayLS_on t_delay t_delayHS_off HS_on t_deadtime t_deadtime
Output Capacitance vs. Drain-to-Source Voltage Figure 4a: C EPC23104 Typical C OSS_HSFET of high-side Power GaN FET Figure 4b: C EPC23104 Typical C OSS_LSFET of low-side Power GaN FET
750
OSS High-Side OSS Low-Side
1000 625 800 500 600 375
Capacitance (pF) Capacitance (pF)
400 250 125 200 0 0 0 25 50 75 100 0 25 50 75 100
VDS - Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V)
EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2026 | For more information: info@epc-co.com | 6
EPC23111
Dynamic Characteristics Parameter Definition Figure 3: Logic Input to Output Switching Node Timing Diagram (current exiting from SW node)
5 V
PWM
50% 0 V
EN
5 V 0 V ~48 V ~700 mV
SW
~-700 mV ~0 V t_delayLS_off t_delayLS_on t_delay t_delayHS_off HS_on t_deadtime t_deadtime
Output Capacitance vs. Drain-to-Source Voltage Figure 4a: C EPC23104 Typical C OSS_HSFET of high-side Power GaN FET Figure 4b: C EPC23104 Typical C OSS_LSFET of low-side Power GaN FET
750
OSS High-Side OSS Low-Side
1000 625 800 500 600 375
Capacitance (pF) Capacitance (pF)
400 250 125 200 0 0 0 25 50 75 100 0 25 50 75 100
VDS - Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V)
EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2026 | For more information: info@epc-co.com | 6