Datasheet EPC23108 (Efficient Power Conversion) - 7

eGaN® IC DATASHEET
EPC23108
Typical Output Charge and COSS Stored Energy Figure 5a: QOSS and EOSS of High-Side Power GaN FET Figure 5b: QOSS and EOSS of Low-Side Power GaN FET
60 2.5 60 2.5 48 2.0 48 2.0
) ) gy (μJ) gy (μJ) ge (nC ge (nC
36
har
1.5 36
har
1.5
ed Ener ed Ener utput C Stor Stor
24 1.0
utput C
24 1.0
OSS OSS − O − C − O − C QOSS QOSS
12
E OSS
0.5 12
E OSS
0.5 0 0.0 0 0.0 0 25 50 75 100 0 25 50 75 100
VDS − Drain-to-Source Voltage (V) VDS − Drain-to-Source Voltage (V) Power GaN FETs Typical RDS(on) vs. Temperature Figure 6a: High Side FET Normalized RDS(on) Figure 6b: Low Side FET Normalized RDS(on)
1.8 1.8 1.6 1.6 1.4 1.4
(mΩ) (mΩ)
1.2 1.2 1.0
R DS(on)_HS R DS(on)_HS
1.0 0.8 0.8 0.6 0.6 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
Temperature (°C) Temperature (°C) Truth Table SD/STB VDD VBOOT – VPHASE HSIN LSIN HS FET LS FET
Low(1) – – – – OFF OFF <VDD_POR – - - OFF OFF – 0 OFF OFF >VDD_POR <VBOOT_POR – 1 OFF ON High 0 0 OFF OFF 0 1 OFF ON >VDD_POR >VBOOT_POR 1 0 ON OFF 1 1 OFF OFF (1) SD/STB immediately inhibits PWM inputs when pul ed low. EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2026 | For more information: info@epc-co.com | 7