Datasheet IRFP260N (Inchange Semiconductor) - 2
| Hersteller | Inchange Semiconductor |
| Beschreibung | N-Channel MOSFET Transistor in TO-247 package |
| Seiten / Seite | 2 / 2 — INCHANGE Semiconductor. isc N-Channel MOSFET Transistor. IRFP260N. I … |
| Dateiformat / Größe | PDF / 386 Kb |
| Dokumentensprache | Englisch |
INCHANGE Semiconductor. isc N-Channel MOSFET Transistor. IRFP260N. I RFP260N. ELECTRICAL CHARACTERISTICS TC=25
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INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP260N
，
I RFP260N ELECTRICAL CHARACTERISTICS TC=25
℃
unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=250μA 200 V VGS(th) Gate Threshold Voltage VDS=VGS; ID=250μA 2.0 4.0 V RDS(on) Drain-Source On-Resistance VGS=10V; ID=28A 40 mΩ IGSS Gate-Source Leakage Current VGS= ±20V ±0.1 μA IDSS Drain-Source Leakage Current VDS=200V; VGS= 0V 25 μA VSD Diode forward voltage IS=28A, VGS = 0V 1.3 V
isc website
：
www.iscsemi.cn
2
isc & iscsemi is registered trademark
Document Outline isc N-Channel MOSFET Transistor IRFP260N，IIRFP isc N-Channel MOSFET Transistor IRFP260N，IIRF
，
I RFP260N ELECTRICAL CHARACTERISTICS TC=25
℃
unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=250μA 200 V VGS(th) Gate Threshold Voltage VDS=VGS; ID=250μA 2.0 4.0 V RDS(on) Drain-Source On-Resistance VGS=10V; ID=28A 40 mΩ IGSS Gate-Source Leakage Current VGS= ±20V ±0.1 μA IDSS Drain-Source Leakage Current VDS=200V; VGS= 0V 25 μA VSD Diode forward voltage IS=28A, VGS = 0V 1.3 V
isc website
：
www.iscsemi.cn
2
isc & iscsemi is registered trademark
Document Outline isc N-Channel MOSFET Transistor IRFP260N，IIRFP isc N-Channel MOSFET Transistor IRFP260N，IIRF