Datasheet NT9003 (Nisshinbo)

Datasheet NT9003HDAE4S Diode for 1mW Class Rectifier FEATURES GENERAL DESCRIPTION
⚫ High reverse voltage*: 20 V The NT9003HDAE4S is a 1 mW-class rectifier diode ⚫ Low forward voltage: 0.1 V typ. @ IF = 4 µA optimized for rectifier circuits in microwave WPT ⚫ Low reverse leakage current: 1.0 µA typ. @ VR = 2 V operating in the 920 MHz, 2.4 GHz, and 5.7 GHz ⚫ Low series resistance: 55Ω typ. bands. @ VF = 0.85 ± 0.01 V This diode features low forward voltage and high ⚫ Low total capacitance: 0.03 pF typ. reverse voltage, enabling a wide dynamic range and @ VR = 2 V, f = 100 MHz high efficiency in WPT rectifier circuits. ⚫ Package size: 1.2 x 1.2 mm typ. t = 0.427 mm max. This diode enables a compact mounting area with its ⚫ RoHS compliant, Halogen free, MSL1 smal DFN package. * Absolute maximum ratings
APPLICATIONS
⚫ Rectifier circuits for microwave wireless power transfer systems DFN1212-4-HD ⚫ Detector 1.2 × 1.2 × 0.427 (mm)
BLOCK DIAGRAM < Gated Anode Diode >
GaAs E-mode HJ-FET Ver.1.1 - 1 - Document Outline FEATURES GENERAL DESCRIPTION APPLICATIONS BLOCK DIAGRAM ■ PRODUCT NAME INFORMATION ■ ORDER INFORMATION ■ PIN DESCRIPTIONS ■ ABSOLUTE MAXIMUM RATINGS ■ THERMAL CHARACTERISTICS ■ ELECTROSTATIC DISCHARGE RATINGS ■ RECOMMENDED OPERATING CONDITIONS ■ ELECTRICAL CHARACTERISTICS (DC) ■ TYPICAL CHARACTERISTICS ■ SPICE MODEL ● Notes on Using the SPICE Model ■ MARKING SPECIFICATION ■ REVISION HISTORY PACKAGE INFORMATION CAUTION