Datasheet BSS316N (Infineon) - 7
| Hersteller | Infineon |
| Beschreibung | N-Channel Small Signal MOSFET 30 V in SOT-23 package |
| Seiten / Seite | 9 / 7 — BSS316N. 13 Avalanche characteristics. 14 Typ. gate charge. 101. 100. … |
| Dateiformat / Größe | PDF / 237 Kb |
| Dokumentensprache | Englisch |
BSS316N. 13 Avalanche characteristics. 14 Typ. gate charge. 101. 100. [A]. [V]. 10-1. 10-2. 103. 102. 0.25. 0.5. 0.75. [µs]. gate [nC]
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Textversion des Dokuments
BSS316N 13 Avalanche characteristics 14 Typ. gate charge
I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=1.4 A pulsed parameter: T j(start) parameter: V DD
101 8 7 6 100
25 °C 15 V
5
6 V 24 V 100 °C
[A] [V] 4 GS I AV V
125 °C
3 10-1 2 1 10-2 0 103 102 101 100 0 0.25 0.5 0.75 1 t AV [µs] Q gate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms
V BR(DSS)=f(T j); I D=250 µA
36 V
GS
35
Q g
34 33 32 [V] ) 31 S 30 BR(DSV
V gs(th)
29 28 27
Q g(th) Q sw
Q gate 26
Q
25
g s Q gd
-60 -20 20 60 100 140 T j [°C]
Rev 2.3 page 7 2011-07-06
I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=1.4 A pulsed parameter: T j(start) parameter: V DD
101 8 7 6 100
25 °C 15 V
5
6 V 24 V 100 °C
[A] [V] 4 GS I AV V
125 °C
3 10-1 2 1 10-2 0 103 102 101 100 0 0.25 0.5 0.75 1 t AV [µs] Q gate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms
V BR(DSS)=f(T j); I D=250 µA
36 V
GS
35
Q g
34 33 32 [V] ) 31 S 30 BR(DSV
V gs(th)
29 28 27
Q g(th) Q sw
Q gate 26
Q
25
g s Q gd
-60 -20 20 60 100 140 T j [°C]
Rev 2.3 page 7 2011-07-06