Datasheet 2N6167 (Digitron Semiconductors) - 2
| Hersteller | Digitron Semiconductors |
| Beschreibung | 13A Silicon Controlled Rectifier in TO-48 ISO package |
| Seiten / Seite | 3 / 2 — High-reliability discrete products. and engineering services since 1977. … |
| Dateiformat / Größe | PDF / 730 Kb |
| Dokumentensprache | Englisch |
High-reliability discrete products. and engineering services since 1977. ELECTRICAL CHARACTERSITICS. Characteristic. Symbol. Min
Modelllinie für dieses Datenblatt
Textversion des Dokuments
2N6167-2N6170
High-reliability discrete products
SILICON CONTROLLED RECTIFIER
and engineering services since 1977 ELECTRICAL CHARACTERSITICS
(TA = 25°C unless otherwise specified)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak repetitive forward or reverse blocking current
(Rated VDRM or VRRM, gate open, TC = 100°C) 2N6167 - 1 2.0 mA 2N6168 - 1 2.5 mA 2N6169 IDRM, IRRM - 1 3.0 mA 2N6170 - 1 4.0 mA (Rated VDRM or VRRM, gate open, TC = 25°C) Al devices - - 10 µA
Peak forward on-state voltage
V Volts (I TM TM = 41A peak) - 1.5 1.7
Gate trigger current (continuous dc)
IGT mA (VD = 12Vdc, RL = 24Ω) TC = -40°C - - 75 TC = 25°C - 2.1 40
Gate trigger voltage (continuous dc)
VGT Volts (VD = 12Vdc, RL = 24Ω) TC = -40°C - 0.8 2.5 TC = 25°C - 0.63 1.6
Holding current
IH mA (VD = 12Vdc, gate open, IT = 200mA) TC = -40°C - - 90 TC = 25°C - 3.5 50
Turn-on time
ton µs (ITM = 41A, VD = rated VDRM, IGT = 200mA, rise time ≤ 0.05µs, pulse width = - - 1 10µs)
Turn-off time
toff µs (ITM = 10A, IR = 10A) - 25 - (ITM = 10A, IR = 10A, TJ = 100°C) - 40 -
Forward voltage application rate
dv/dt V/µs (TJ = 100°C, VD = Rated VDRM) - 50 - Rev. 20150306
High-reliability discrete products
SILICON CONTROLLED RECTIFIER
and engineering services since 1977 ELECTRICAL CHARACTERSITICS
(TA = 25°C unless otherwise specified)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak repetitive forward or reverse blocking current
(Rated VDRM or VRRM, gate open, TC = 100°C) 2N6167 - 1 2.0 mA 2N6168 - 1 2.5 mA 2N6169 IDRM, IRRM - 1 3.0 mA 2N6170 - 1 4.0 mA (Rated VDRM or VRRM, gate open, TC = 25°C) Al devices - - 10 µA
Peak forward on-state voltage
V Volts (I TM TM = 41A peak) - 1.5 1.7
Gate trigger current (continuous dc)
IGT mA (VD = 12Vdc, RL = 24Ω) TC = -40°C - - 75 TC = 25°C - 2.1 40
Gate trigger voltage (continuous dc)
VGT Volts (VD = 12Vdc, RL = 24Ω) TC = -40°C - 0.8 2.5 TC = 25°C - 0.63 1.6
Holding current
IH mA (VD = 12Vdc, gate open, IT = 200mA) TC = -40°C - - 90 TC = 25°C - 3.5 50
Turn-on time
ton µs (ITM = 41A, VD = rated VDRM, IGT = 200mA, rise time ≤ 0.05µs, pulse width = - - 1 10µs)
Turn-off time
toff µs (ITM = 10A, IR = 10A) - 25 - (ITM = 10A, IR = 10A, TJ = 100°C) - 40 -
Forward voltage application rate
dv/dt V/µs (TJ = 100°C, VD = Rated VDRM) - 50 - Rev. 20150306