Datasheet 2N5060, 2N5061, 2N5062, 2N5064 (ON Semiconductor) - 4
| Hersteller | ON Semiconductor |
| Beschreibung | Sensitive Gate Silicon Controlled Rectifiers 0.8 A RMS in TO-92 package |
| Seiten / Seite | 9 / 4 — 2N5060 Series. CURRENT DERATING. Figure 4. Maximum Non−Repetitive Surge … |
| Dateiformat / Größe | PDF / 208 Kb |
| Dokumentensprache | Englisch |
2N5060 Series. CURRENT DERATING. Figure 4. Maximum Non−Repetitive Surge Current. Figure 3. Typical Forward Voltage
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2N5060 Series CURRENT DERATING
5.0 10 7.0 3.0 (AMP) 5.0 2.0 TJ = 110°C 25°C 3.0 1.0 2.0 , PEAK SURGE CURRENT (AMP) 0.7 I TSM 0.5 1.0 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 TE CURRENT A 0.3 NUMBER OF CYCLES
Figure 4. Maximum Non−Repetitive Surge Current
0.2 ANEOUS ON‐ST 0.8 180° ANT 0.1 120° a , INST 0.07 60° 90° i T 0.6 a = CONDUCTION ANGLE a 0.05 TTS) = 30° A VERAGE POWER A 0.4 0.03 TION (W A dc 0.02 , MAXIMUM DISSIP 0.2 V) (AP 0.01 0 0 0.5 1.0 1.5 2.0 2.5 0 0.1 0.2 0.3 0.4 0.5 vT, INSTANTANEOUS ON‐STATE VOLTAGE (VOLTS) IT(AV), AVERAGE ON‐STATE CURRENT (AMP)
Figure 3. Typical Forward Voltage Figure 5. Power Dissipation www.onsemi.com 4
5.0 10 7.0 3.0 (AMP) 5.0 2.0 TJ = 110°C 25°C 3.0 1.0 2.0 , PEAK SURGE CURRENT (AMP) 0.7 I TSM 0.5 1.0 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 TE CURRENT A 0.3 NUMBER OF CYCLES
Figure 4. Maximum Non−Repetitive Surge Current
0.2 ANEOUS ON‐ST 0.8 180° ANT 0.1 120° a , INST 0.07 60° 90° i T 0.6 a = CONDUCTION ANGLE a 0.05 TTS) = 30° A VERAGE POWER A 0.4 0.03 TION (W A dc 0.02 , MAXIMUM DISSIP 0.2 V) (AP 0.01 0 0 0.5 1.0 1.5 2.0 2.5 0 0.1 0.2 0.3 0.4 0.5 vT, INSTANTANEOUS ON‐STATE VOLTAGE (VOLTS) IT(AV), AVERAGE ON‐STATE CURRENT (AMP)
Figure 3. Typical Forward Voltage Figure 5. Power Dissipation www.onsemi.com 4