Datasheet 2N1613 (CDIL)

Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N1613 TO-39 Metal Can Package ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS Collector Emitter Voltage (RBE<10
Ω) VCER 50 V
Collector Base Voltage
VCBO 75 V
Emitter Base Voltage
VEBO 7.0 V
Collector Current Continuous
IC 500 mA
Power Dissipation @ Ta=25ºC
PD 800 mW
Derate Above 25ºC
4.57 mW/ºC
Power Dissipation@ Tc=25ºC
PD 3 W
Derate Above 25ºC
17.15 mW/ºC
Operating And Storage Junction
Tj, Tstg -65 to +200 ºC
Temperature Range THERMAL RESISTANCE Junction to Ambient
Rth(j-a) 218.7 ºC/W
Junction to Case
Rth(j-c) 58.3 ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL MIN TYP MAX UNITS Collector Emitter Breakdown Voltage
VCER(sus)* IC=100mA,RBE <10Ω 50 V
Collector Base Breakdown Voltage
BVCBO IC=100µA, IE=0 75 V
Emitter Base Breakdown Voltage
BVEBO IE =100µA, IC=0 7 V
Collector Leakage Current
ICBO VCB=60V, IE=0 10 nA VCB=60V, IE=0,TA=150ºC 10 µA
Emitter Leakage Current
IEBO VEB=5V,IC=0 10 nA
Collector Emitter Saturation Voltage
VCE(Sat) * IC=150mA,IB=15mA 0.3 1.5 V
Base Emitter Saturation Voltage
VBE(Sat) * IC=150mA,IB=15mA 0.78 1.3 V
DC Current Gain
hFE* IC=0.1mA,VCE=10V 20 35 IC=10mA,VCE=10V 35 50 IC=150mA,VCE=10V 40 80 120 IC=500mA,VCE=10V 20 30 IC=10mA,VCE=10V 20 Ta=-55ºC Continental Device India Limited
Data Sheet
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