Datasheet GS8551, GS8552, GS8554 (Gainsil) - 3

HerstellerGainsil
Beschreibung1.8MHZ Zero-Drift CMOS Rail-to-Rail IO Opamp with RF Filter
Seiten / Seite14 / 3 — PARAMETER. CONDITIONS. MIN. TYP. MAX. UNITS. INPUT CHARACTERISTICS. …
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DokumentenspracheEnglisch

PARAMETER. CONDITIONS. MIN. TYP. MAX. UNITS. INPUT CHARACTERISTICS. OUTPUT CHARACTERISTICS. POWER SUPPLY. NOISE PERFORMANCE

PARAMETER CONDITIONS MIN TYP MAX UNITS INPUT CHARACTERISTICS OUTPUT CHARACTERISTICS POWER SUPPLY NOISE PERFORMANCE

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GS8551/8552/8554 Electrical Characteristics (VS = +5V, VCM = +2.5V, VO = +2.5V, TA = +25℃, unless otherwise noted.)
PARAMETER CONDITIONS MIN TYP MAX UNITS INPUT CHARACTERISTICS
Input Offset Voltage (VOS) 1 30 µV Input Bias Current (IB) 20 pA Input Offset Current (IOS) 10 pA Common-Mode Rejection Ratio VCM = 0V to 5V 110 dB (CMRR) Large Signal Voltage Gain ( AVO) RL = 10kΩ, VO = 0.3V to 4.7V 145 dB Input Offset Voltage Drift (∆VOS/∆T) 10 50 nV/℃
OUTPUT CHARACTERISTICS
RL = 100kΩ to - VS 4.998 V Output Voltage High (VOH) RL = 10kΩ to - VS 4.994 V RL = 100kΩ to + VS 2 mV Output Voltage Low (VOL) RL = 10kΩ to + VS 5 mV Short Circuit Limit (ISC) RL =10Ω to - VS 60 mA Output Current (IO) 65 mA
POWER SUPPLY
Power Supply Rejection Ratio (PSRR) VS = 2.5V to 5.5V 115 dB Quiescent Current (IQ) VO = 0V, RL = 0Ω 180 µA DYNAMIC PERFORMANCE Gain-Bandwidth Product (GBP) G = +100 1.8 MHz Slew Rate (SR) RL = 10kΩ 0.95 V/µs Overload Recovery Time 0.10 ms
NOISE PERFORMANCE
Voltage Noise (en p-p) 0Hz to 10Hz 0.3 µVP-P Voltage Noise Density (en) f = 1kHz 38 nV Hz / March 2020-REV_V2 3/14