Datasheet J111, J112, J113, MMBFJ111, MMBFJ112, MMBFJ113 (ON Semiconductor) - 4

J111, J112, J113, MMBFJ111, MMBFJ112, MMBFJ113 TYPICAL PERFORMANCE CHARACTERISTICS
(CONTINUED) W W 100 100 125°C VGS(off) @ 5.0 V, 10 mA VGS(off) 50 TYP = −2.0 V ANCE ( r ANCE (m DS 50 r 25°C DS + V 20 GS 1 * 125°C VGS(off) VGS(off) TYP = −7.0 V 10 − 55°C 5 20 25°C rDS @ VGS(off) = 0 2 − 55°C , DRAIN “ON” RESIST , NORMALIZED RESIST 10 1 DS 1 2 5 10 20 50 100 0 0.2 0.4 0.6 0.8 1 r DS ID, DRAIN CURRENT (mA) VGS/VGS(off), NORMALIZED GATE−SOURCE VOLTAGE (V)
Figure 7. On Resistance vs. Drain Current Figure 8. Normalized Drain Resistance vs. Bias Voltage
)r ) W 100 mW 100 TA = 25°C TA = 25° V V DG = 5.0 V DG = 15 V f = 1.0 kHz 5.0 V f = 1.0 kHz 10 V 5.0 V ANECE ( 15 V 20 V 10 V ANECE (m 10 15 V 10 V 15 V 20 V VGS(off) = −5.0 V 20 V 10 VGS(off) = −1.4 V 1 VGS(off) = −3.0 V VGS(off) = −2.0 V VGS(off) = −0.85 V , TRANSCONDUCT 1 , OUTPUT CONDUCT 0.1 g fs 0.1 1 10 0.01 0.1 10 g os ID, DRAIN CURRENT (mA) ID I , DRAIN CURRENT (mA)
Figure 9. Transconductance vs. Drain Current Figure 10. Output Conductance vs. Drain Current
100 100 V √Hz) DG = 15 V 50 BW = 6.0 Hz @ f = 10 Hz, 100 Hz = 0.21 @ f ≥ 1.0 kHz f = 0.1 − 1.0 MHz ANCE (pF) ACIT 10 TAGE (nV / 10 Cis (VDS = 0) 5 ), CAP C ID = 1.0 mA rs is (VDS = 20) C I (C rs (VDS = 0) D = 10 mA isC , NOICE VOL 1 e n 1 0 −4 −8 −12 −16 −20 0.01 1 10 100 VGS, GATE−SOURCE VOLTAGE (V) f, FREQUENCY (kHz)
Figure 11. Capacitance vs. Voltage Figure 12. Noise Voltage vs. Frequency www.onsemi.com 4