Datasheet J111, J112 (ON Semiconductor) - 4
| Hersteller | ON Semiconductor |
| Beschreibung | JFET Chopper Transistors in TO-92 package |
| Seiten / Seite | 7 / 4 — J111, J112. Figure 6. Typical Forward Transfer Admittance. Figure 7. … |
| Dateiformat / Größe | PDF / 167 Kb |
| Dokumentensprache | Englisch |
J111, J112. Figure 6. Typical Forward Transfer Admittance. Figure 7. Typical Capacitance
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J111, J112
o 20 15 (mmh J112 10 ANCE J111 Cgs 10 J113 (pF) 7.0 7.0 ANCE 5.0 Cgd ACIT 5.0 Tchannel = 25°C TRANSFER ADMITT VDS = 15 V 3.0 C, CAP Tchannel = 25°C ARD 2.0 (Cds IS NEGLIGIBLE) W 3.0 1.5 , FOR fsy 2.0 1.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.03 0.05 0.1 0.3 0.5 1.0 3.0 5.0 10 30 ID, DRAIN CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Typical Forward Transfer Admittance Figure 7. Typical Capacitance
200 2.0 IDSS 25 50mA 75mA 100mA 125mA I E = 10 mA E D = 1.0 mA T T 1.8 A A VGS = 0 160 mA 1.6 1.4 120 1.2 ANCE (OHMS) 80 ANCE (NORMALIZED) 1.0 , DRAIN−SOURCE ON−ST RESIST , DRAIN−SOURCE ON−ST 0.8 T RESIST 40 channel = 25°C r ds(on) r ds(on) 0.6 0 0.4 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 −70 −40 −10 20 50 80 110 140 170 VGS, GATE−SOURCE VOLTAGE (VOLTS) Tchannel, CHANNEL TEMPERATURE (°C)
Figure 8. Effect of Gate−Source Voltage Figure 9. Effect of Temperature On On Drain−Source Resistance Drain−Source On−State Resistance NOTE 2
100 10 The Zero−Gate−Voltage Drain Current (I T DSS), is the channel = 25°C E T 90 9.0 TS) principle determinant of other J-FET characteristics. A Figure 10 shows the relationship of Gate−Source Off 80 8.0 (VOL Voltage (VGS(off) and Drain−Source On Resistance 70 7.0 rDS(on) @ VGS = 0 TAGE (rds(on)) to IDSS. Most of the devices will be within ±10% 60 6.0 of the values shown in Figure 10. This data will be useful VOL VGS(off) in predicting the characteristic variations for a given part ANCE (OHMS) 50 5.0 number. 40 4.0 For example: , DRAIN−SOURCE ON−ST RESIST 30 3.0 TE−SOURCE Unknown 20 2.0 , GA r r ds(on) ds(on) and VGS range for an J112 GS 10 1.0 V The electrical characteristics table indicates that an J112 0 0 has an IDSS range of 25 to 75 mA. Figure 10, shows 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 rds(on) = 52 W for IDSS = 25 mA and 30 W for IDSS, ZERO−GATE−VOLTAGE DRAIN CURRENT (mA) IDSS = 75 mA. The corresponding VGS values are 2.2 V and 4.8 V.
Figure 10. Effect of IDSS On Drain−Source Resistance and Gate−Source Voltage http://onsemi.com 4
J111, J112
o 20 15 (mmh J112 10 ANCE J111 Cgs 10 J113 (pF) 7.0 7.0 ANCE 5.0 Cgd ACIT 5.0 Tchannel = 25°C TRANSFER ADMITT VDS = 15 V 3.0 C, CAP Tchannel = 25°C ARD 2.0 (Cds IS NEGLIGIBLE) W 3.0 1.5 , FOR fsy 2.0 1.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.03 0.05 0.1 0.3 0.5 1.0 3.0 5.0 10 30 ID, DRAIN CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Typical Forward Transfer Admittance Figure 7. Typical Capacitance
200 2.0 IDSS 25 50mA 75mA 100mA 125mA I E = 10 mA E D = 1.0 mA T T 1.8 A A VGS = 0 160 mA 1.6 1.4 120 1.2 ANCE (OHMS) 80 ANCE (NORMALIZED) 1.0 , DRAIN−SOURCE ON−ST RESIST , DRAIN−SOURCE ON−ST 0.8 T RESIST 40 channel = 25°C r ds(on) r ds(on) 0.6 0 0.4 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 −70 −40 −10 20 50 80 110 140 170 VGS, GATE−SOURCE VOLTAGE (VOLTS) Tchannel, CHANNEL TEMPERATURE (°C)
Figure 8. Effect of Gate−Source Voltage Figure 9. Effect of Temperature On On Drain−Source Resistance Drain−Source On−State Resistance NOTE 2
100 10 The Zero−Gate−Voltage Drain Current (I T DSS), is the channel = 25°C E T 90 9.0 TS) principle determinant of other J-FET characteristics. A Figure 10 shows the relationship of Gate−Source Off 80 8.0 (VOL Voltage (VGS(off) and Drain−Source On Resistance 70 7.0 rDS(on) @ VGS = 0 TAGE (rds(on)) to IDSS. Most of the devices will be within ±10% 60 6.0 of the values shown in Figure 10. This data will be useful VOL VGS(off) in predicting the characteristic variations for a given part ANCE (OHMS) 50 5.0 number. 40 4.0 For example: , DRAIN−SOURCE ON−ST RESIST 30 3.0 TE−SOURCE Unknown 20 2.0 , GA r r ds(on) ds(on) and VGS range for an J112 GS 10 1.0 V The electrical characteristics table indicates that an J112 0 0 has an IDSS range of 25 to 75 mA. Figure 10, shows 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 rds(on) = 52 W for IDSS = 25 mA and 30 W for IDSS, ZERO−GATE−VOLTAGE DRAIN CURRENT (mA) IDSS = 75 mA. The corresponding VGS values are 2.2 V and 4.8 V.
Figure 10. Effect of IDSS On Drain−Source Resistance and Gate−Source Voltage http://onsemi.com 4