Datasheet IRF4435TR-VB (VBsemi) - 4

IRF4435TR-VB
www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.05 100 10 TJ = 150 °C TJ = 25 °C 1 0.04 R DS(on) -On-Resistance (Ω) IS -Source Current (A) ID = 7 A TJ = 125 °C
0.03 0.02
TJ = 25 °C
0.01 0.00
0 8 12 16 VSD -Source-to-Drain Voltage (V) VGS -Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage 2.1 50 1.9 40 1.7
ID = 250 µA
1.5 20 30 20 1.3 1.1
-50 4 Source-Drain Diode Forward Voltage Power (W) VGS(th) (V) 0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 10 -25 0 25 50 75 100 125 0
0.001 150 0.01 0.1 1 10 TJ -Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 100
Limited by RDS(on)* ID -Drain Current (A) 10
1 ms
1
10 ms
100 ms
0.1
TA = 25 °C
Single Pulse
0.01
0.1 BVDSS
Limited
1 10 1s
10 s
DC 100 VDS -Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 服务热线：400-655-8788 4