Datasheet DXTP80100CFG (Diodes) - 4

DXTP80100CFG Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO -110 — — V IC = -100µA Collector-Emitter Breakdown Voltage (Note 10) BVCEO -100 — — V IC = -10mA Emitter-Collector Breakdown Voltage BVECO -5 — — V IE = -100µA Emitter-Base Breakdown Voltage BVEBO -8 — — V IE = -100µA — — -100 nA VCB = -110V Collector Cutoff Current ICBO — — -1 µA VCB = -110V, TA = +125°C Collector Cutoff Current ICES — — -300 nA VCE = -80V Emitter Cutoff Current IEBO — — -50 nA VEB = -7V — -80 — mV IC = -100mA, IB = -1mA — -150 -200 mV IC = -1A, IB = -20mA Collector-Emitter Saturation Voltage (Note 10) VCE(sat) — -50 -70 mV IC = -1A, IB = -100mA — -180 -300 mV IC = -2.5A, IB = -125mA — -170 -300 mV IC = -4A, IB = -400mA — -840 -950 mV IC = -2.5A, IB = -125mA Base-Emitter Saturation Voltage (Note 10) VBE(sat) — -930 -1,050 mV IC = -4A, IB = -400mA — -750 -850 mV IC = -2.5A, VCE = -2V Base-Emitter Turn-On Voltage (Note 10) VBE(on) — -820 -900 mV IC = -4A, VCE = -2V 200 335 — — IC = -10mA, VCE = -2V 250 325 420 — IC = -100mA, VCE = -2V 200 290 — — IC = -1A, VCE = -2V DC Current Gain (Note 10) hFE 150 230 — — IC = -2A, VCE = -2V 75 140 — — IC = -2.5A, VCE = -2V 25 40 — — IC = -4A, VCE = -2V Input Capacitance Cibo — 560 — pF VEB = 0.5V, f = 1MHz Output Capacitance Cobo — 37 — pF VCB = 10V, f = 1MHz V Current Gain-Bandwidth Product f CE = -10V, IC = -100mA T 100 160 — MHz f = 50MHz td — 15 — ns Turn-On Time tr — 100 — ns VCC = -10V, IC = -2.5A ts — 265 — ns IB1 = -IB2 = -250mA Turn-Off Time tf — 45 — ns Note: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Fig 6. Timing Waveform
DXTP80100CFG 4 of 8 August 2025 Document number: DS46852 Rev. 2 - 2
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