Datasheet DXTP80030DFGQ (Diodes) - 4

DXTP80030DFGQ Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO -40 — — V IC = -100µA Collector-Emitter Breakdown Voltage (Note 10) BVCEO -30 — — V IC = -10mA Emitter-Collector Breakdown Voltage BVECO -5 — — V IE = -100µA Emitter-Base Breakdown Voltage BVEBO -8 — — V IE = -100µA — — -100 nA VCB = -30V Collector Cutoff Current ICBO — — -10 µA VCB = -30V, TA = +125°C Collector Cutoff Current ICES — — -300 nA VCE = -24V Emitter Cutoff Current IEBO — — -50 nA VEB = -7V — -35 — mV IC = -100mA, IB = -1mA — -40 -65 mV IC = -1A, IB = -20mA Collector-Emitter Saturation Voltage (Note 10) VCE(sat) — -22 -35 mV IC = -1A, IB = -100mA — -115 -150 mV IC = -4A, IB = -80mA — -130 -220 mV IC = -7.5A, IB = -375mA — -825 -950 mV IC = -4A, IB = -80mA Base-Emitter Saturation Voltage (Note 10) VBE(sat) — -940 -1,100 mV IC = -7.5A, IB = -375mA — -760 -900 mV IC = -4A, VCE = -2V Base-Emitter Turn-On Voltage (Note 10) VBE(on) — -795 -900 mV IC = -7.5A, VCE = -2V 250 440 — — IC = -10mA, VCE = -2V 300 430 550 — IC = -100mA, VCE = -2V 240 375 — — IC = -1A, VCE = -2V DC Current Gain (Note 10) hFE 220 335 — — IC = -2A, VCE = -2V 180 280 — — IC = -4A, VCE = -2V 120 200 — — IC = -7.5A, VCE = -2V Input Capacitance Cibo — 530 — pF VEB = 0.5V, f = 1MHz Output Capacitance Cobo — 50 — pF VCB = 10V, f = 1MHz V Current Gain-Bandwidth Product f CE = -10V, IC = -100mA T 100 190 — MHz f = 50MHz td — 13.5 — ns Turn-On Time tr — 40 — ns VCC = -10V, IC = -4A ts — 140 — ns IB1 = -IB2 = -400mA Turn-Off Time tf — 6.5 — ns Note: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Fig. 6 Timing Waveform
DXTP80030DFGQ 4 of 8 August 2025 Document number: DS46954 Rev. 2 - 2
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