Datasheet DXTP78100CFGQ (Diodes) - 2

DXTP78100CFGQ Absolute Maximum Ratings
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO -110 V Collector-Emitter Voltage VCEO -100 V Emitter-Base Voltage VEBO -8 V Continuous Collector Current (Note 5) IC -1.5 A Continuous Collector Current (Note 7) IC -2.5 A Peak Pulse Current ICM -8 A
Thermal Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
(Note 5) 900 mW Power Dissipation (Note 6) PD 1.6 W (Note 7) 2.4 W (Note 5) 140 °C/W Thermal Resistance, Junction to Ambient (Note 6) RθJA 92 °C/W (Note 7) 62.5 °C/W Thermal Resistance, Junction to Case (Note 7) RθJC 8 °C/W Thermal Resistance, Junction to Lead (Note 8) RθJL 6.5 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +175 °C
ESD Ratings
(Note 9)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Electrostatic Discharge - Charged Device Model ESD CDM 1,000 V IV Notes: 5. For a device mounted with the collector tab on MRP FR4-PCB; device is measured under still air conditions whilst operating in a steady state. 6. Same as Note 5, except the device is mounted on 15mm x 15mm 2oz copper. 7. Same as Note 5, except the device is mounted on 25mm x 25mm 2oz copper. 8. Thermal resistance from junction to solder-point (at the collector tab). 9. Refer to JEDEC specifications JESD22-A114, JESD22-A115 and JESD22-C101. DXTP78100CFGQ 2 of 8 August 2025 Document number: DS46962 Rev. 2 - 2
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