Datasheet DXTP78100CFG (Diodes) - 5
| Hersteller | Diodes |
| Beschreibung | PNP, 100V, 2.5A in PowerDI3333-8/SWP package |
| Seiten / Seite | 8 / 5 — DXTP78100CFG. Typical Electrical Characteristics. Fig. 7 h v I. Fig. 8 V. … |
| Dateiformat / Größe | PDF / 625 Kb |
| Dokumentensprache | Englisch |
DXTP78100CFG. Typical Electrical Characteristics. Fig. 7 h v I. Fig. 8 V. v I. CE(sat). Fig. 9 V. Fig. 10 V. BE(on). Fig. 11 V
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DXTP78100CFG Typical Electrical Characteristics
(@TA = +25°C, unless otherwise specified.) 800 1 V =-2V I /I =10 C B CE 700 150°C 600 85°C 500 ) ni V 150°C a ( ) G 400 t 25°C 0.1 sa( h
FE
CE 300 -V 85°C -55°C 200 25°C 100 -55°C 0 0.01 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 -I Collector Current (A) -I Collector Current (A) C C
Fig. 7 h v I Fig. 8 V v I FE C CE(sat) C
1 1.2 Ta=25°C V =-2V CE 1.0 I /I =50 -55°C C B ) 0.8 V( ) I /I =20 25°C C B ) V t ( sa ( 0.1 )n 0.6 o CE ( E -V B I /I =10 0.4 C B -V 85°C 150°C 0.2 0.01 0.0 0.01 0.1 1 10 0.001 0.01 0.1 1 10 -I Collector Current (A) -I Collector Current (A) C C
Fig. 9 V v I Fig. 10 V v I CE(sat) C BE(on) C
1.2 I /I =10 C B f=1MHz 1.0 ) -55°C pF( ) 0.8 Cibo V 25°C ce ( 100 )t an sa 0.6 t ( E B aci -V 0.4 150°C ap 85°C C Cobo 0.2 0.0 10 0.001 0.01 0.1 1 10 0 10 20 30 40 -I Collector Current (A) V Reverse Voltage (V) C
R Fig. 11 V v I Fig. 12 Typical Junction Capacitance BE(sat) C
DXTP78100CFG 5 of 8 August 2025 Document number: DS46858 Rev. 2 - 2
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© 2025 Copyright Diodes Incorporated. All Rights Reserved.
(@TA = +25°C, unless otherwise specified.) 800 1 V =-2V I /I =10 C B CE 700 150°C 600 85°C 500 ) ni V 150°C a ( ) G 400 t 25°C 0.1 sa( h
FE
CE 300 -V 85°C -55°C 200 25°C 100 -55°C 0 0.01 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 -I Collector Current (A) -I Collector Current (A) C C
Fig. 7 h v I Fig. 8 V v I FE C CE(sat) C
1 1.2 Ta=25°C V =-2V CE 1.0 I /I =50 -55°C C B ) 0.8 V( ) I /I =20 25°C C B ) V t ( sa ( 0.1 )n 0.6 o CE ( E -V B I /I =10 0.4 C B -V 85°C 150°C 0.2 0.01 0.0 0.01 0.1 1 10 0.001 0.01 0.1 1 10 -I Collector Current (A) -I Collector Current (A) C C
Fig. 9 V v I Fig. 10 V v I CE(sat) C BE(on) C
1.2 I /I =10 C B f=1MHz 1.0 ) -55°C pF( ) 0.8 Cibo V 25°C ce ( 100 )t an sa 0.6 t ( E B aci -V 0.4 150°C ap 85°C C Cobo 0.2 0.0 10 0.001 0.01 0.1 1 10 0 10 20 30 40 -I Collector Current (A) V Reverse Voltage (V) C
R Fig. 11 V v I Fig. 12 Typical Junction Capacitance BE(sat) C
DXTP78100CFG 5 of 8 August 2025 Document number: DS46858 Rev. 2 - 2
www.diodes.com
© 2025 Copyright Diodes Incorporated. All Rights Reserved.