Datasheet DXTN78030DFG (Diodes) - 4

DXTN78030DFG Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO 80 — — V IC = 100µA Collector-Emitter Breakdown Voltage (Note 10) BVCEO 30 — — V IC = 10mA Emitter-Collector Breakdown Voltage BVECO 5 — — V IE = 100µA Emitter-Base Breakdown Voltage BVEBO 8 — — V IE = 100µA — — 100 nA VCB = 80V Collector Cutoff Current ICBO — — 1 µA VCB = 80V, TA = +125°C Collector Cutoff Current ICES — — 300 nA VCE = 24V Emitter Cutoff Current IEBO — — 50 nA VEB = 7V — 30 — mV IC = 100mA, IB = 1mA — 20 35 mV IC = 1A, IB = 100mA Collector-Emitter Saturation Voltage (Note 10) VCE(sat) — 55 75 mV IC = 2A, IB = 40mA — 90 125 mV IC = 4A, IB = 80mA — 140 175 mV IC = 9A, IB = 450mA — 850 1,050 mV IC = 4A, IB = 80mA Base-Emitter Saturation Voltage (Note 10) VBE(sat) — 1 1.15 V IC = 9A, IB = 450mA — 750 900 mV IC = 4A, VCE = 2V Base-Emitter Turn-On Voltage (Note 10) VBE(on) — 780 900 mV IC = 9A, VCE = 2V 200 — — — IC = 10mA, VCE = 2V 300 390 550 — IC = 100mA, VCE = 2V 270 370 — — IC = 1A, VCE = 2V DC Current Gain (Note 10) hFE 250 350 — — IC = 2A, VCE = 2V 200 300 — — IC = 4A, VCE = 2V 100 180 — — IC = 9A, VCE = 2V Input Capacitance Cibo — 340 — pF VEB = 0.5V, f = 1MHz Output Capacitance Cobo — 30 — pF VCB = 10V, f = 1MHz V Current Gain-Bandwidth Product f CE = 5V, IC = 100mA T 150 260 — MHz f = 100MHz td — 11.6 — ns Turn-On Time tr — 42 — ns VCC = 10V, IC = 4A ts — 179 — ns IB1 = -IB2 = 400mA Turn-Off Time tf — 4.2 — ns Note: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Fig 6. Timing Waveform
DXTN78030DFG 4 of 8 September 2025 Document number: DS46859 Rev. 2 - 2
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