Datasheet DXTN78100CFGQ (Diodes) - 4

DXTN78100CFGQ Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO 150 — — V IC = 100µA Collector-Emitter Breakdown Voltage (Note 10) BVCEO 100 — — V IC = 10mA Emitter-Collector Breakdown Voltage BVECO 5 — — V IE = 100µA Emitter-Base Breakdown Voltage BVEBO 8 — — V IE = 100µA — — 100 nA VCB = 150V Collector Cut-off Current ICBO — — 10 µA VCB = 150V, TA = +125°C Collector Cut-off Current ICES — — 300 nA VCE = 80V Emitter Cut-off Current IEBO — — 50 nA VEB = 7V — 80 — mV IC = 100mA, IB = 1mA — 100 150 mV IC = 1A, IB = 20mA Collector-Emitter Saturation Voltage (Note 10) VCE(sat) — 40 60 mV IC = 1A, IB = 100mA — 70 120 mV IC = 2A, IB = 200mA — 130 340 mV IC = 4A, IB = 400mA — 870 1,000 mV IC = 2A, IB = 200mA Base-Emitter Saturation Voltage (Note 10) VBE(sat) — 950 1,100 mV IC = 4A, IB = 400mA — 770 850 mV IC = 2A, VCE = 2V Base-Emitter Turn-On Voltage (Note 10) VBE(on) — 850 950 mV IC = 4A, VCE = 2V 200 320 — — IC = 10mA, VCE = 2V 250 320 420 — IC = 100mA, VCE = 2V 210 300 — — IC = 500mA, VCE = 2V DC Current Gain (Note 10) hFE 140 200 — — IC = 1A, VCE = 2V 35 80 — — IC = 2A, VCE = 2V 10 30 — — IC = 4A, VCE = 2V Input Capacitance Cibo — 360 — pF VEB = 0.5V, f = 1MHz Output Capacitance Cobo — 12.5 — pF VCB = 10V, f = 1MHz V Current Gain-Bandwidth Product f CE = 10V, IC = 100mA, T 150 210 — MHz f = 50MHz td — 12.5 — ns Turn-On Time tr — 145 — ns VCC = 10V, IC = 2A, ts — 430 — ns IB1 = -IB2 = 200mA Turn-Off Time tf — 83 — ns Note: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Fig 6. Timing Waveform
DXTN78100CFGQ 4 of 8 August 2025 Document number: DS46965 Rev. 2 - 2
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