Datasheet CMOSH-3 (Central Semiconductor)
| Hersteller | Central Semiconductor |
| Beschreibung | 30V Surface mount Diode-Schottky (<1A) Single in SOD-523 package |
| Seiten / Seite | 5 / 1 — CMOSH-3. w w w. c e n t r a l s e m i . c o m. SURFACE MOUNT SILICON. … |
| Dateiformat / Größe | PDF / 674 Kb |
| Dokumentensprache | Englisch |
CMOSH-3. w w w. c e n t r a l s e m i . c o m. SURFACE MOUNT SILICON. DESCRIPTION:. SCHOTTKY DIODE. MARKING CODE: 53. SOD-523 CASE
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CMOSH-3 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON DESCRIPTION: SCHOTTKY DIODE
The CENTRAL SEMICONDUCTOR CMOSH-3 is a silicon Schottky diode, epoxy molded in an SOD-523 surface mount package, designed for fast switching applications requiring a low forward voltage drop.
MARKING CODE: 53 SOD-523 CASE MAXIMUM RATINGS:
(TA=25°C)
SYMBOL UNITS
Peak Repetitive Reverse Voltage VRRM 30 V Continuous Forward Current IF 100 mA Peak Repetitive Forward Current IFRM 350 mA Peak Forward Surge Current, tp=10ms IFSM 750 mA Power Dissipation PD 250 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ΘJA 500 °C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
IR VR=25V 90 500 nA IR VR=25V, TA=100°C 25 100 μA BVR IR=100μA 30 V VF IF=2.0mA 0.29 0.33 V VF IF=15mA 0.37 0.45 V VF IF=100mA 0.51 1.00 V CJ VR=1.0V, f=1.0MHz 7.0 pF trr IF=IR=10mA, Irr=1.0mA, RL=100Ω 5.0 ns R6 (11-February 2016)
The CENTRAL SEMICONDUCTOR CMOSH-3 is a silicon Schottky diode, epoxy molded in an SOD-523 surface mount package, designed for fast switching applications requiring a low forward voltage drop.
MARKING CODE: 53 SOD-523 CASE MAXIMUM RATINGS:
(TA=25°C)
SYMBOL UNITS
Peak Repetitive Reverse Voltage VRRM 30 V Continuous Forward Current IF 100 mA Peak Repetitive Forward Current IFRM 350 mA Peak Forward Surge Current, tp=10ms IFSM 750 mA Power Dissipation PD 250 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ΘJA 500 °C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
IR VR=25V 90 500 nA IR VR=25V, TA=100°C 25 100 μA BVR IR=100μA 30 V VF IF=2.0mA 0.29 0.33 V VF IF=15mA 0.37 0.45 V VF IF=100mA 0.51 1.00 V CJ VR=1.0V, f=1.0MHz 7.0 pF trr IF=IR=10mA, Irr=1.0mA, RL=100Ω 5.0 ns R6 (11-February 2016)