Datasheet IRFP460 (Vishay) - 4

IRFP460
www.vishay.com Vishay Siliconix 10 000 102 VGS = 0 V, f = 1 MHz C = C + C , C Shorted iss gs gd ds C = C 8000 rss gd C = C + C oss ds gd 6000 Ciss ain Current (A) 4000 150 °C erse Dr Capacitance (pF) v Coss 25 °C 2000 , Re I SD Crss V = 0 V GS 0 101 100 101 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 91237_05 V V DS, Drain-to-Source Voltage (V) 91237_07 SD, Source-to-Drain Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage
20 103 I = 20 A D Operation in this area limited 5 V = 400 V by R DS DS(on) 16 2 ltage (V) V = 250 V o DS V 102 12 5 10 µs V = 100 V DS 2 8 ain Current (A) 100 µs 10 , Dr I D 5 , Gate-to-Source 4 1 ms T = 25
°
C C GS For test circuit V 2 T = 150
°
C J 10 ms see figure 13 Single Pulse 0 1 2 5 2 5 2 5 0 40 80 120 160 200 1 10 102 103 V 91237_06 Q 91237_08 G, Total Gate Charge (nC) DS, Drain-to-Source Voltage (V)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area
S22-0058-Rev. B, 31-Jan-2022
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