Datasheet MPF4392 (ON Semiconductor) - 5

MPF4392, MPF4393
100 10 Tchannel = 25C
NOTE 2
E 90 9.0 T A The Zero−Gate−Voltage Drain Current (I 80 8.0 DSS), is the TAGE principle determinant of other J−FET characteristics. 70 r 7.0 DS(on) @ VGS = 0 Figure 10 shows the relationship of Gate−Source Off 60 6.0 Voltage (VGS(off)) and Drain−Source On Resistance (r 50 VGS(off) 5.0 TS) ds(on)) to IDSS. Most of the devices will be within 10% ANCE (OHMS) of the values shown in Figure 10. This data will be useful 40 4.0 TE-SOURCE VOL (VOL in predicting the characteristic variations for a given part , DRAIN-SOURCE ON-ST 30 RESIST 3.0 , GA number. For example: 20 2.0 GS ds(on) V r Unknown 10 1.0 rds(on) and VGS range for an MPF4392 0 0 The electrical characteristics table indicates that an 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 MPF4392 has an IDSS range of 25 to 75 mA. Figure 10 IDSS, ZERO-GATE VOLTAGE DRAIN CURRENT (mA) shows rds(on) = 52 W for IDSS = 25 mA and 30 W for IDSS 75 mA. The corresponding V
Figure 10. Effect of I
GS values are 2.2 V and
DSS On Drain−Source
4.8 V.
Resistance and Gate−Source Voltage http://onsemi.com 5