Datasheet THAT 300 (THAT Corporation) - 2
| Hersteller | THAT Corporation |
| Beschreibung | Low-Noise Matched Transistor Arrays |
| Seiten / Seite | 8 / 2 — THAT 300. THAT 320. THAT 340. SUB. SPECIFICATIONS1. Absolute Maximum … |
| Dateiformat / Größe | PDF / 108 Kb |
| Dokumentensprache | Englisch |
THAT 300. THAT 320. THAT 340. SUB. SPECIFICATIONS1. Absolute Maximum Ratings2,3. NPN Electrical Characteristics2
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Document 600041 Rev 04 Page 2 of 8 THAT 300 Series Transistor Array ICs
THAT 300 THAT 320 THAT 340 1 14 1 14 1 14 2 13 2 13 2 13 Q1 Q2 Q1 Q2 Q1 Q2 3 12 3 12 3 12 4 SUB SUB 11 4 SUB SUB 11 4 SUB SUB 11 5 10 5 10 5 10 6 9 6 9 6 9 Q3 Q4 Q3 Q4 Q3 Q4 7 8 7 8 7 8
Figure 1. 300 Pinout Figure 2. 320 Pinout Figure 3. 340 Pinout
SPECIFICATIONS1 Absolute Maximum Ratings2,3
NPN Collector-Emitter Voltage (BVCEO) 36 V Collector Current 30 mA NPN Collector-Base Voltage (BVCBO) 36V Emitter Current 30 mA PNP Collector-Emitter Voltage (BVCEO) –36 V Operating Temperature Range (TOP) -40 to +85 °C PNP Collector-Base Voltage (BVCBO) –36 V Maximum Junction Temperature (TJMAX) +125 °C Collector-Substrate Voltage (BVCS) ± 100 V Storage Temperature (TST) -45 to +125 °C
NPN Electrical Characteristics2
Parameter Symbol Conditions 300 / 340(Q1,Q2) 300A 300B Units Min Typ Max Min Typ Max Min Typ Max VCB = 10 V, IC = 1 mA 60 100 — 150 — — 300 — — NPN Current gain hfe IC = 10 µA — 100 — — — — — — — NPN Current Gain Matching Δhfe VCB = 10V, IC = 1mA — 4 — — 4 — — 4 — % NPN Noise Voltage Density eN VCB = 10V, IC = 1 mA, 1kHz — 0.8 — — 0.9 — — 1 — nV√Hz NPN Gain-Bandwidth Product fT IC = 1 mA, VCB = 10V — 350 — — 350 — — 350 — MHz NPN ΔVBE IC = 1 mA — 0.5 3 — 0.5 3 — 0.5 3 mV 300: |VBE1-VBE2| ; |VBE3-VBE4| VOS IC = 10 mA — 0.5 — — 0.5 — — 0.5 — mV 340: |VBE1-VBE2| NPN ΔIB IC = 1 mA — 500 1500 — 200 600 — 100 300 nA 300: |IB1-IB2| ; |IB3-IB4| IOS IC = 10 μA — 5 — — 2 — — 1 — nA 340: |IB1-IB2| NPN Collector-Base Leakage ICBO VCB = 25 V — 25 — — 25 — — 25 — pA Current NPN Bulk Resistance rBE VCB = 0V, 10 μA < IC < 10mA — 2 — — 2 — — 2 — Ω NPN Base Spreading Resistance rbb VCB = 10 V, IC = 1 mA — 32 — — 32 — — 32 — Ω NPN Collector Saturation Voltage VCE(SAT) IC = 1 mA, IB = 100μA — 0.05 — — 0.05 — — 0.05 — V THAT Corporation; 45 Sumner Street; Milford, Massachusetts 01757-1656; USA Tel: +1 508 478 9200; Fax: +1 508 478 0990; Web: www.thatcorp.com Copyright © 2013, THAT Corporation. All rights reserved. Document Outline Home Features & Applications Description Ordering Information Pin Assignments Specifications Absolute Maximum Ratings NPN Electrical Characteristics PNP Electrical Characteristics Packaging and Soldering Information Package Characteristics Revision History
THAT 300 THAT 320 THAT 340 1 14 1 14 1 14 2 13 2 13 2 13 Q1 Q2 Q1 Q2 Q1 Q2 3 12 3 12 3 12 4 SUB SUB 11 4 SUB SUB 11 4 SUB SUB 11 5 10 5 10 5 10 6 9 6 9 6 9 Q3 Q4 Q3 Q4 Q3 Q4 7 8 7 8 7 8
Figure 1. 300 Pinout Figure 2. 320 Pinout Figure 3. 340 Pinout
SPECIFICATIONS1 Absolute Maximum Ratings2,3
NPN Collector-Emitter Voltage (BVCEO) 36 V Collector Current 30 mA NPN Collector-Base Voltage (BVCBO) 36V Emitter Current 30 mA PNP Collector-Emitter Voltage (BVCEO) –36 V Operating Temperature Range (TOP) -40 to +85 °C PNP Collector-Base Voltage (BVCBO) –36 V Maximum Junction Temperature (TJMAX) +125 °C Collector-Substrate Voltage (BVCS) ± 100 V Storage Temperature (TST) -45 to +125 °C
NPN Electrical Characteristics2
Parameter Symbol Conditions 300 / 340(Q1,Q2) 300A 300B Units Min Typ Max Min Typ Max Min Typ Max VCB = 10 V, IC = 1 mA 60 100 — 150 — — 300 — — NPN Current gain hfe IC = 10 µA — 100 — — — — — — — NPN Current Gain Matching Δhfe VCB = 10V, IC = 1mA — 4 — — 4 — — 4 — % NPN Noise Voltage Density eN VCB = 10V, IC = 1 mA, 1kHz — 0.8 — — 0.9 — — 1 — nV√Hz NPN Gain-Bandwidth Product fT IC = 1 mA, VCB = 10V — 350 — — 350 — — 350 — MHz NPN ΔVBE IC = 1 mA — 0.5 3 — 0.5 3 — 0.5 3 mV 300: |VBE1-VBE2| ; |VBE3-VBE4| VOS IC = 10 mA — 0.5 — — 0.5 — — 0.5 — mV 340: |VBE1-VBE2| NPN ΔIB IC = 1 mA — 500 1500 — 200 600 — 100 300 nA 300: |IB1-IB2| ; |IB3-IB4| IOS IC = 10 μA — 5 — — 2 — — 1 — nA 340: |IB1-IB2| NPN Collector-Base Leakage ICBO VCB = 25 V — 25 — — 25 — — 25 — pA Current NPN Bulk Resistance rBE VCB = 0V, 10 μA < IC < 10mA — 2 — — 2 — — 2 — Ω NPN Base Spreading Resistance rbb VCB = 10 V, IC = 1 mA — 32 — — 32 — — 32 — Ω NPN Collector Saturation Voltage VCE(SAT) IC = 1 mA, IB = 100μA — 0.05 — — 0.05 — — 0.05 — V THAT Corporation; 45 Sumner Street; Milford, Massachusetts 01757-1656; USA Tel: +1 508 478 9200; Fax: +1 508 478 0990; Web: www.thatcorp.com Copyright © 2013, THAT Corporation. All rights reserved. Document Outline Home Features & Applications Description Ordering Information Pin Assignments Specifications Absolute Maximum Ratings NPN Electrical Characteristics PNP Electrical Characteristics Packaging and Soldering Information Package Characteristics Revision History