Datasheet FDD86110 (Inchange Semiconductor) - 2

isc N-Channel MOSFET Transistor FDD86110 ELECTRICAL CHARACTERISTICS TC=25
℃
unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 100 -- V VGS(th) Gate Threshold Voltage VDS= 10V; ID= 0.25mA 2 4 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 12.5A -- 10.2 mΩ IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 -- ±0.1 uA IDSS Zero Gate Voltage Drain Current VDS= 80V; VGS= 0 -- 1.0 uA VSD Forward On-Voltage IS= 12.5A; VGS= 0 -- 1.3 V
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Document Outline isc N-Channel MOSFET Transistor FDD FEATURES DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25℃) ELECTRICAL CHARACTERISTICS