Datasheet MAX16126, MAX16127 (Analog Devices) - 3
| Hersteller | Analog Devices |
| Beschreibung | Load-Dump/Reverse-Voltage Protection Circuits |
| Seiten / Seite | 19 / 3 — MAX16126/MAX16127. Electrical Characteristics (continued). PARAMETER. … |
| Dateiformat / Größe | PDF / 1.2 Mb |
| Dokumentensprache | Englisch |
MAX16126/MAX16127. Electrical Characteristics (continued). PARAMETER. SYMBOL. CONDITIONS. MIN. TYP. MAX. UNITS. Note 2:. Note 3:
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MAX16126/MAX16127
Load-Dump/Reverse-Voltage Protection Circuits
Electrical Characteristics (continued)
(VIN = 12V, CGATE-SOURCE = 1nF, TA = -40°C to +125°C, unless otherwise noted. Typical values are at TA = +25°C.) (Note 2)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Startup Response Time tSTART (Note 3) 150 µs Autoretry Timeout tRETRY 150 ms GATE Rise Time tRISE VGATE rising (GND to VSRC + 8V) 1 ms OVSET-to-GATE Propagation Delay t VOVSET rising (VTH - 100mV to OVG VTH + 100mV) 0.55 µs UVSET-to-GATE Propagation Delay t VUVSET falling (VTH + 100mV to UVG VTH - 100mV) 20 µs MAX16126 4 Output Input Resistance to GND ROUT MΩ MAX16127 2 OVSET-to-FLAG Propagation Delay t VOVSET rising (VTH - 100mV to OV VTH + 100mV) 0.3 µs VIN = VSRC = VOUT = 3V, IGATE = -1µA 4.25 5 5.5 VIN = VSRC = VOUT = 12V, GATE Output Voltage High Above IGATE = -1µA 8 9 10 V VGS V SRC VIN = VSRC = VOUT = 24V, IGATE = -1µA 7 8.5 10 VIN = VSRC = VOUT = 30V, IGATE = -1µA 6.25 8 9.5 GATE Pulldown Current IPD VGATE = 12V 8.8 mA GATE Charge-Pump Current IGATE VIN = VGATE = VSRC = 12V 180 µA Thermal Shutdown T+ +145 °C Thermal-Shutdown Hysteresis ΔT 15 °C SHDN Logic-High Input Voltage VIH 1.4 V SHDN Logic-Low Input Voltage VIL 0.4 V SHDN Input Pulse Width tPW 6 µs SHDN Input Pulldown Current ISPD 0.8 1.2 µA FLAG Output Voltage Low VOL FLAG sinking 1mA 0.4 V FLAG Leakage Current IIL VFLAG = 12V 0.5 µA
Note 2:
All parameters are production tested at TA = +25°C. Limits over the operating temperature range are guaranteed by design.
Note 3:
The MAX16126/MAX16127 power up with the external MOSFETs in off mode (VGATE = VSRC). The external MOSFETs turn on tSTART after the IC is powered up and all input conditions are valid. www.analog.com Analog Devices │ 3
Load-Dump/Reverse-Voltage Protection Circuits
Electrical Characteristics (continued)
(VIN = 12V, CGATE-SOURCE = 1nF, TA = -40°C to +125°C, unless otherwise noted. Typical values are at TA = +25°C.) (Note 2)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Startup Response Time tSTART (Note 3) 150 µs Autoretry Timeout tRETRY 150 ms GATE Rise Time tRISE VGATE rising (GND to VSRC + 8V) 1 ms OVSET-to-GATE Propagation Delay t VOVSET rising (VTH - 100mV to OVG VTH + 100mV) 0.55 µs UVSET-to-GATE Propagation Delay t VUVSET falling (VTH + 100mV to UVG VTH - 100mV) 20 µs MAX16126 4 Output Input Resistance to GND ROUT MΩ MAX16127 2 OVSET-to-FLAG Propagation Delay t VOVSET rising (VTH - 100mV to OV VTH + 100mV) 0.3 µs VIN = VSRC = VOUT = 3V, IGATE = -1µA 4.25 5 5.5 VIN = VSRC = VOUT = 12V, GATE Output Voltage High Above IGATE = -1µA 8 9 10 V VGS V SRC VIN = VSRC = VOUT = 24V, IGATE = -1µA 7 8.5 10 VIN = VSRC = VOUT = 30V, IGATE = -1µA 6.25 8 9.5 GATE Pulldown Current IPD VGATE = 12V 8.8 mA GATE Charge-Pump Current IGATE VIN = VGATE = VSRC = 12V 180 µA Thermal Shutdown T+ +145 °C Thermal-Shutdown Hysteresis ΔT 15 °C SHDN Logic-High Input Voltage VIH 1.4 V SHDN Logic-Low Input Voltage VIL 0.4 V SHDN Input Pulse Width tPW 6 µs SHDN Input Pulldown Current ISPD 0.8 1.2 µA FLAG Output Voltage Low VOL FLAG sinking 1mA 0.4 V FLAG Leakage Current IIL VFLAG = 12V 0.5 µA
Note 2:
All parameters are production tested at TA = +25°C. Limits over the operating temperature range are guaranteed by design.
Note 3:
The MAX16126/MAX16127 power up with the external MOSFETs in off mode (VGATE = VSRC). The external MOSFETs turn on tSTART after the IC is powered up and all input conditions are valid. www.analog.com Analog Devices │ 3